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A laser beam of 0.005 W with photon energy of 1.6 eV is incident on a GaAs PIN phot-detector. The detector i-region width is 6 jum , its cross sectional area is A = 0.8 cm, and its absorption coefficient at the incident photon energy is agaAs =1 x 10 cm'. If 20\% of the incident photon flux is reflected back at the detector surface, calculate the detector photo-current I: Select one: O A. IL = 0.00230 A O B. IL = 9.02e-4 A O C. IL = 8.00e-5 A OD. IL = 8.00e-4 A OE. IL = 0.00130 A Clear my choice

A laser beam of 0.005 W with photon energy of 1.6 eV is incident on a GaAs PIN phot-detector. The detector i-region width is 6 jum , its cross sectional area is A = 0.8 cm, and its absorption coefficient at the incident photon energy is agaAs =1 x 10 cm'. If 20\% of the incident photon flux is reflected back at the detector surface, calculate the detector photo-current I: Select one: O A. IL = 0.00230 A O B. IL = 9.02e-4 A O C. IL = 8.00e-5 A OD. IL = 8.00e-4 A OE. IL = 0.00130 A Clear my choice

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A laser beam of 0.005 W with photon energy of 1.6 eV is incident on a GaAs PIN phot-detector. The detector i-region width is 6 pum, its cross sectional area is A= 0.8 cm, and its absorption coefficient at the incident photon energy is agaAs cm'. If 20\% of the incident photon flux is reflected back at the detector surface, calculate the detector photo-current IL: 1x 10 Select one: O A. IL = 0.00230 A O B. IL = 9.02e-4 A O C. IL = 8.00e-5 A O D. IL = 8.00e-4 A OE. IL = 0.00130 A Clear my choice that will absorh 60 %% of
Transcribed Image Text:A laser beam of 0.005 W with photon energy of 1.6 eV is incident on a GaAs PIN phot-detector. The detector i-region width is 6 pum, its cross sectional area is A= 0.8 cm, and its absorption coefficient at the incident photon energy is agaAs cm'. If 20\% of the incident photon flux is reflected back at the detector surface, calculate the detector photo-current IL: 1x 10 Select one: O A. IL = 0.00230 A O B. IL = 9.02e-4 A O C. IL = 8.00e-5 A O D. IL = 8.00e-4 A OE. IL = 0.00130 A Clear my choice that will absorh 60 %% of
: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR h 6.63 × 10-34 J.s Si Ge m. 9.11 x 10-31 Kg Eg (eV) п, (ст-3) Hn (cm²/V – s) Hp (cm² /V – s) Ne (cm-8) N, (cm-³) m/m. mi,/m. €, (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 × 10–19 C 1500 3900 8500 8.85 x 10-12 F/m 450 1900 400 1.05 × 10¬34 J – s 2.78 x 1019 1.04 x 1019 4.45 × 1017 8.6 x 10-5 eV/K 26 mV (T = 300 K) 26 теV (T %3 300 К) 3 × 10® m/s K 9.84 × 1018 6 x 1018 7.72 × 1018 KT/q 0.082 0.98 0.067 ΚΤ 0.28 0.49 0.45 11.7 16 13.1 Nair = 1 NGaAs = 3.66 Some useful relations E ALGA1-,As (x) = 1.424 + 1.247x EgIn.Ga1-2As(x) = 0.36 + 1.064x 1 eV = 1.602 × 10¬19 J 1 KG = 1 × 10-5 Wb/cm²
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR h 6.63 × 10-34 J.s Si Ge m. 9.11 x 10-31 Kg Eg (eV) п, (ст-3) Hn (cm²/V – s) Hp (cm² /V – s) Ne (cm-8) N, (cm-³) m/m. mi,/m. €, (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 × 10–19 C 1500 3900 8500 8.85 x 10-12 F/m 450 1900 400 1.05 × 10¬34 J – s 2.78 x 1019 1.04 x 1019 4.45 × 1017 8.6 x 10-5 eV/K 26 mV (T = 300 K) 26 теV (T %3 300 К) 3 × 10® m/s K 9.84 × 1018 6 x 1018 7.72 × 1018 KT/q 0.082 0.98 0.067 ΚΤ 0.28 0.49 0.45 11.7 16 13.1 Nair = 1 NGaAs = 3.66 Some useful relations E ALGA1-,As (x) = 1.424 + 1.247x EgIn.Ga1-2As(x) = 0.36 + 1.064x 1 eV = 1.602 × 10¬19 J 1 KG = 1 × 10-5 Wb/cm²
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