A silicon n-p-n bipolar transistor has impurity concentrations of 3x10base, and collector, respectively. Determine the diffusion constants of minority carriers in the three regionsby using Einstein's relationship, D= (kT/q)µ. Assume that the mobilities of electrons and holes, µ.can be expressed as:2x10 , and 5x10cm in the emitter,and1252407HHy = 88+and= 54.3 +at T = 300 K%3D1+0.698 ×10-17 N1+ 0.374 x 10-17NUsing the results obtained from above , determine the current components in each region with VBE = 0.6 V,(operated under active mode). The device cross sectional area is 1 mm2 and the neutral base width is 0.5um.Assume the minority carrier lifetime in each region is the same and equal to 10- s.

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Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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For the transistor , IS = 4 × 10−16 μA,βF = 75, and βR = 4. (a) Label the collector, base,and emitter terminals of the transistor. (b) What isthe transistor type? (c) Label the emitter-base andcollector-base voltages, and label the normal direction for IE , IC, and IB. (d) Write the simplified formof the transport model equations that apply to thisparticular circuit configuration. Write an expressionfor IE /IB. Write an expression for IE /IC. (e) Findthe values of IE , IC, IB, VC B, and VE B.
For the transistor , IS = 6×10−16 μA,αF = 0.985, and αR = 0.25. (a) What type oftransistor is in this circuit? (b) Label the collector, base, and emitter terminals of the transistor.(c) Label the emitter-base and collector-base voltages, and label the normal direction for IE , IC, andIB. (d) Write the simplified form of the transportmodel equations that apply to this particular circuitconfiguration. Write an expression for IE /IC. Writean expression for IE /IB. (e) Find the values of IE ,IC, IB, βF , βR, VE B, and VC B.
Consider an n-channel MOSFET. Sketch a cross section through the source, gate and drain regions (a)if the source, drain and gate are all grounded, sketch the depletion regions on both sides of the metallurgical junctions.
Using IC that is approximately equal to IE. Determine the value of emitter voltage VE, when VCC=18V, RC=2202 ohms, RE=392 ohms, VC=7 V and R2=5386ohm
Solve for the collector-emitter voltage for the circuit shown.
For many years, MOS devices were scaled tosmaller and smaller dimensions without changingthe power supply voltage. Suppose that the widthW, length L, and oxide thickness Tox of a MOS transistor are all reduced by a factor of 2. Assume thatVT N , vGS, and vDS remain the same. (a) Calculatethe ratio of the drain current of the scaled device tothat of the original device. (b) By what factor hasthe power dissipation changed? (c) By what factorhas the value of the total gate capacitance changed?(d) By what factor has the circuit delay Tchanged?
A GaAlAs LED with an active region width of 1.5 μm operates at 300K at a current density of 120A/cm2. Assuming that the steady state electron density is n=1017 cm-3calculate the carrier lifetime. Also calculate the optical 3-dB cut-off frequency
An NMOS device has μn = 400 cm2/V·s. Whatis the cutoff frequency for L = 1 μm if the transistor is biased at 1 V above threshold? What wouldbe the cutoff frequency of a similar PMOS deviceif μp = 0.4 μn? (b) Repeat for L = 0.1 μm
Consider a p-channel MOSFET. Sketch a cross section through the source, gate and drain regions. a) if the source, drain and gate are all grounded, sketch the depletion regions on both sides of the metallurgical junctions. b) what voltage (positive or negative) should be applied to the gate to induce a conducting channel connecting the source and drain? Why? c) sketch all applicable depletion regions for the MOSFET when the source and drain remain grounded, but an appropriate voltage is applied to the gate to induce a channel. d) sketch all applicable depletion regions for the MOSFET when the source remains grounded, an appropriate voltage is applied to the gate to induce a channel, and a drain voltage is applied that causes a reverse bias between the drain and the substrate.
Consider a MOSFET that has been fabricated on an n-type siliconwafer with initial uniform phosphorus doping, ND = 1.45 x 10^15 cm–3.The gate oxide of the device has a thickness tox = 22.50 nm and afixed charge density, Qf /q = 1.75 x 10^11 cm–2 (assume other oxidecharges are negligibly small). The work function difference betweenthe polysilicon gate and the silicon substrate is –0.85 V.If zero bias is applied between the source and the silicon substrate,and short channel effects are ignored, what is the threshold voltage ofthe device at room temperature (300 K)
Write the Shockley equation for the emitter current of an npn transistor.
A Haynes-Shockley experiment was conducted on n-Silicon. The maximum deviations in current amplitude from equilibrium at times t1 = 100 us and t2 = 200 s differ by a factor of 5. Calculate the minority carrier lifetime.

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