A piece of Si doped with 1016 cm-3 Boron atoms. At T-300 °k, the hole concentration is (a) 10¹6 cm-3 O a с Ob (b) 104 cm-3 (c) 1020 cm-3 (d) 10¹2 cm-3

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Chapter8: Basic Electric Motors
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A piece of Si doped with 1016 cm-3 Boron atoms. At T=300 °k, the hole
concentration is
(a) 10¹6 cm-3
a
Ob
d
(b) 104 cm-3
(c) 1020 cm-3
(d) 10¹2 cm-3
Transcribed Image Text:A piece of Si doped with 1016 cm-3 Boron atoms. At T=300 °k, the hole concentration is (a) 10¹6 cm-3 a Ob d (b) 104 cm-3 (c) 1020 cm-3 (d) 10¹2 cm-3
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