A silicon pin photodiode with an intrinsic layer, or i-layer, has a width of 10 (µm) and a reverse bias voltage of 30 (V) is applied to the photodiode. If a short pulse of light is absorbed just inside the depletion region on the p*-side of the diode (which the light passes through first), then the photogenerated electrons must drift through the entire i-layer. The quantum efficiency is 0.9 and a 35 (fJ) light pulse at 500 (nm) wavelength is used for photoexcitation. a. How long will the photocurrent last? b. How many electron-hole pairs are generated by absorption of this light pulse? c. Calculate the transient photocurrent?

A silicon pin photodiode with an intrinsic layer, or i-layer, has a width of 10 (µm) and a reverse bias voltage of 30 (V) is applied to the photodiode. If a short pulse of light is absorbed just inside the depletion region on the p*-side of the diode (which the light passes through first), then the photogenerated electrons must drift through the entire i-layer. The quantum efficiency is 0.9 and a 35 (fJ) light pulse at 500 (nm) wavelength is used for photoexcitation. a. How long will the photocurrent last? b. How many electron-hole pairs are generated by absorption of this light pulse? c. Calculate the transient photocurrent?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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