a) When the output voltage of a static CMOS inverter just begins the transition from a high output voltage to a low output voltage, it is likely the PMOS device is in the saturation region and the NMOS device is in triode. b) The primary reason NMOS resistively loaded logic is undesired for modern applications relates to the fact that VoL does not come all the way down to ground (zero volts). c) A p-type MOS capacitor has a positive voltage bias applied from the metal side of the oxide to the p-type semiconductor, and the voltage is above the flatband voltage (VFB), the capacitor is in “inversion".

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a) When the output voltage of a static CMOS inverter just begins the
transition from a high output voltage to a low output voltage, it is likely
the PMOS device is in the saturation region and the NMOS device is in
triode.
b) The primary reason NMOS resistively loaded logic is undesired for
modern applications relates to the fact that VOL does not come all the
way down to ground (zero volts).
c) A p-type MOS capacitor has a positive voltage bias applied from the
metal side of the oxide to the p-type semiconductor, and the voltage is
above the flatband voltage (VFB), the capacitor is in “inversion".
d) To achieve optimal CMOS inverter performance, it is best to size the
PMOS and NMOS device equally – e.g. ()PMos = G)nmos-
W
e) If the ratio NA/ND remains constant, but the doping concentration on
both sides of a PN junction are increased, the depletion region depth
(Xp& Xp ) will also increase.
f) To best match the rise and fall times of a CMOS inverter, Kn should
equal Kp – or, Kn = Kp.
Transcribed Image Text:a) When the output voltage of a static CMOS inverter just begins the transition from a high output voltage to a low output voltage, it is likely the PMOS device is in the saturation region and the NMOS device is in triode. b) The primary reason NMOS resistively loaded logic is undesired for modern applications relates to the fact that VOL does not come all the way down to ground (zero volts). c) A p-type MOS capacitor has a positive voltage bias applied from the metal side of the oxide to the p-type semiconductor, and the voltage is above the flatband voltage (VFB), the capacitor is in “inversion". d) To achieve optimal CMOS inverter performance, it is best to size the PMOS and NMOS device equally – e.g. ()PMos = G)nmos- W e) If the ratio NA/ND remains constant, but the doping concentration on both sides of a PN junction are increased, the depletion region depth (Xp& Xp ) will also increase. f) To best match the rise and fall times of a CMOS inverter, Kn should equal Kp – or, Kn = Kp.
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