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EBK ELECTRICAL WIRING RESIDENTIAL
19th Edition
ISBN:9781337516549
Author:Simmons
Publisher:Simmons
Chapter25: Television, Telephone, And Low-voltage Signal Systems
Section25.1: Television Circuit
Problem 5R: From a cost standpoint, which system is more economical to install: a master amplifier distribution...
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Q2.
(a)
Draw the circuit diagram for n-channel and p- channel enhancement-type
MOSFET with correct labels.
(b)
Discuss three main advantages of a n-channel enhancement-type
MOSEFT when compared to p-channel.
(c) An n-channel enhancement type MOSFET switching circuit with the
following MOSFET's parameters; VDD = 105V; Rp = 182; KN = 28.0 mA/V²;
Vr = 5V; Vos = 4V; and Vas = 10V.
Draw a circuit diagram of an n-channel MOSFET switching circuit and
(i)
label appropriately
(ii)
Calculate the drain current Io
(iii)
Calculate the drain source resistance Ros
(iv)
Calculate the transconductance gain gm in the linear region
Transcribed Image Text:Q2. (a) Draw the circuit diagram for n-channel and p- channel enhancement-type MOSFET with correct labels. (b) Discuss three main advantages of a n-channel enhancement-type MOSEFT when compared to p-channel. (c) An n-channel enhancement type MOSFET switching circuit with the following MOSFET's parameters; VDD = 105V; Rp = 182; KN = 28.0 mA/V²; Vr = 5V; Vos = 4V; and Vas = 10V. Draw a circuit diagram of an n-channel MOSFET switching circuit and (i) label appropriately (ii) Calculate the drain current Io (iii) Calculate the drain source resistance Ros (iv) Calculate the transconductance gain gm in the linear region
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