(b) A device engineer fabricates a sensor by depositing an a-Si:H film on a glass substrate and then depositing an Al electrode onto the a-Si:H film. The device has the structure glass/a-Si:H/metal. The glass substrate is 10 mm thick. The a-Si: is 5 μm thick and the Al electrode is 0.2 µm thick. The expansion coefficients of glass, a-Si:H and Al are about 7×106 K-¹, 4×106 K-¹, 23×106 K-¹ respectively. Elastic moduli are Eglass = 70 GPa, Ea-Si:H= 100 GPa, EA1 = 70 GPa. Calculate the stress in each layer if the temperature drops from 25 °C to -50 °C.
(b) A device engineer fabricates a sensor by depositing an a-Si:H film on a glass substrate and then depositing an Al electrode onto the a-Si:H film. The device has the structure glass/a-Si:H/metal. The glass substrate is 10 mm thick. The a-Si: is 5 μm thick and the Al electrode is 0.2 µm thick. The expansion coefficients of glass, a-Si:H and Al are about 7×106 K-¹, 4×106 K-¹, 23×106 K-¹ respectively. Elastic moduli are Eglass = 70 GPa, Ea-Si:H= 100 GPa, EA1 = 70 GPa. Calculate the stress in each layer if the temperature drops from 25 °C to -50 °C.
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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