Calculate the gate to source voltage VGs for a NMOS transistor with B=2200HA/V, V= LV and operating in saturation with a transconductance g 5 mS.Draw the small signal equivalent circuit model valid in the mid-band frequeneyrange for the circuit shown in Figure 1 and identify the kind of amplifier formedby the NMOS transistor Ml. Clearly state any assumption.Using two transistors nominally identical to MI and the configuration shown inFigure 1, design a còmmon source voltage amplifier with improved gain. Drawthe mid-band frequency range for the resulting circuit in the hypothesis that thevalue R, is very big (open circuit) and state what kind of configuration you used.Explain why the resulting output impedance is bigger when compared to asingle stage common source amplifier.R,RpM1outCsR,RsI'ss =0VFigure IDraw the schematie cireuit for a resistively loaded NMOS inverter, withresistance Rp, and the relative voltage transfer characteristic where the differentregiens of operation of the transistor are shown.Design the inverter of question (a), by ehoosing the smaller possible value ofRp, to work generating a static power dissipation smaller than 5 mW whenoperating with voltage bias l'oD -5V and high input voltage FH= VDD. For thecaleulation consider that the threshold voltage of the transistor is negligiblecompared to the high input voltage ViH >> Vi and that B= 1500 µV/A. Stateany assumption and consider the absolute value of the current for the calculationof the power.Verify that with the value ef smaller resistance possible found in (b) thetransistor is operating in the linear region.

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Calculate the gate to source voltage VGs for a NMOS transistor with B 2200 HA/V, V=1 V and operating in saturation with a transconductance gm 5 mS. %3D %3D Draw the small signal equivalent circuit model valid in the mid-band frequency range for the circuit shown in Figure 1 and identify the kind of amplifier formed by the NMOS transistor M1. Clearly state any assumption. Using two transistors nominally identical to MI and the configuration shown in Figure 1, design a common source voltage amplifier with improved gain. Draw the mid-band frequenci

Calculate the gate to source voltage VGs for a NMOS transistor with B 2200 HA/V, V=1 V and operating in saturation with a transconductance gm 5 mS. %3D %3D Draw the small signal equivalent circuit model valid in the mid-band frequency range for the circuit shown in Figure 1 and identify the kind of amplifier formed by the NMOS transistor M1. Clearly state any assumption. Using two transistors nominally identical to MI and the configuration shown in Figure 1, design a common source voltage amplifier with improved gain. Draw the mid-band frequenci

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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For a particular n-channel MOS technology, in which the minimum channel length is 0.2 μm, the associated value of λ is 0.5 V-1. If a particular device for which L is 1.0 μm operates in saturation at vDS = 1 V with a drain current of 100 μA, what does the drain current become if vDS is raised to 2 V? What percentage change does this represent? What can be done to reduce the percentage by a factor of 2?
The current source for a current switch is implementedwith a transistor and three resistors, as shown. What is the current IEE? What is theminimum permissible value of VREF if transistor QSis to remain in the forward-active region? Assumethat βF is large.
Suppose that an NMOS transistor must conduct acurrent ID = 10 A with VDS ≤ 0.1 V when it is on.What is the maximum on-resistance of the transistor? If VG = 5 V is used to turn on the transistorand VT N = 2 V, what is the minimum value of Knrequired to achieve the required on-resistance?
(a) What is the base-emitter voltage in the circuitshown? Use the transport equations and thetransistor parameters from Table shown (b) What isthe base-emitter voltage if βF = 80? (c) What isVBE if IB is increased to 1 mA and βF = 40?
IBQ, ICQ, VE, VCEQ, VC for a transistor with VBE = 0.6 and β = 50. Draw and label the DC load-line. From b, if transferred to the center of the load-line, determine the new values of R1 and R2 and draw the final circuit.
In solving the following three problems, assume constant-voltage model for transistors and use VBE,ON=0.75V for NPN transistors and VEB,ON=0.75V for PNP transistors. When working with the constant-voltage model, you will not need the given values for Is
Our calculation of the input resistance of the common-gate and common-base amplifiers neglected ro in the calculation. (a) Calculate an improvedestimate for Rin for the common-gate stage as shown. (b) What is Rin if RL = ro?
Calculate the transconductance for an NMOS transistor for VGS = 2 V and 3.3 V, with VDS = 3.3 V,if W = 20μm, L = 1 μm, VTN = 0.7 V, andKn = 250 μA/V2. Check the saturation regionassumption
Q3 a) A transistor can be operated in saturation, active and cut-off region. What are the normal conditions of bias across the transistor to operate it in these different modes? b) Draw the complete circuit diagram of a transistor connected in CC mode with proper biasing along with its input output characteristics c) Draw the complete circuit diagram of a transistor connected in CE mode with proper biasing along with its input output characteristics.
Derive an expression for gm, in terms of K, Vto, VGSQ, and IDQ for an NMOS transistor operating in the triode region.
The switches as shown can be implemented using MOSFETs, as shown. What must be the W/L ratios of the transistors if the onresistance of the transistor is to be less than 1 percent of the resistor 2R = 12 kΩ? Use VREF = 3.0V. Assume that the voltage applied to the gate of the MOSFET is 5Vwhen b1 = 1 and 0Vwhen b1 = 0. For the MOSFET, VTN = 1 V, Kn = 50 μA/V2, 2φF = 0.6 V, and γ = 0.5√V.
An N-channel MOSFET with N+-poly gate is fabricated on a 15 n. cm P-type Si wafer (a) Determine the flat-band voltage Vfb. (b) What is the threshold voltage, Vt? (c) A circuit designer requested N-MOSFET with Vt = 0.5 V from a device engineer. It was not allowed to change the gate oxide thickness. If you are the device engineer, what can you do? Give specific answer.; including what type of equipment to use.