Calculate the mean-free (or average) time between collisions for electrons (in the conduction band; use m') in silicon (0.98m.)and GaAs (0.067m.). If you were to design silicon and GaAs transistors for ballistic transport (no collisions in the channel), how short would the channels have to be? Assume that the electron speed is determined not by the applied electric fięld, bụt instead by thermal motion: vh : 3kT m Use silicon mobility 1350 cm²/Vs and GaAs mobility 8500 cm²/Vs

Calculate the mean-free (or average) time between collisions for electrons (in the conduction band; use m') in silicon (0.98m.)and GaAs (0.067m.). If you were to design silicon and GaAs transistors for ballistic transport (no collisions in the channel), how short would the channels have to be? Assume that the electron speed is determined not by the applied electric fięld, bụt instead by thermal motion: vh : 3kT m Use silicon mobility 1350 cm²/Vs and GaAs mobility 8500 cm²/Vs