Compare the approximate radiative minority carrier lifetimes in gallium arsenide and silicon when the minority carriers are electrons injected into the p-type region which has a hole concentration of 10^18 cm−3. The injected electron density is small compared with the majority carrier density.

Compare the approximate radiative minority carrier lifetimes in gallium arsenide and silicon when the minority carriers are electrons injected into the p-type region which has a hole concentration of 10^18 cm−3. The injected electron density is small compared with the majority carrier density.

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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