Compare the switching devices listed below according to the table provided Comparison: BJT, MOSFET & IGBT Device BJT MOSFET IGBT characteristics Voltage rating High<1KV High1KV Current rating |Input Drive Input impedance Output impedance Switching speed cost Comparison: BJT, MOSFET & IGBT IGCT Item GTO IGBT Maximum switch 36MVA 36MVA 6MVA power Switching speed Behaviour after destruction On state losses Switching losses Gate driver Gate driver power consumption

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Compare the switching devices listed below according to the table provided
Comparison: BJT, MOSFET & IGBT
Device
BJT
MOSFET
IGBT
characteristics
Voltage rating High<1KV High<lkV
Very High
>1KV
Current rating
Input Drive
Input
impedance
Output
impedance
Switching
speed
cost
Comparison: BJT, MOSFET & IGBT
GTO
Item
IGCT
IGBT
Maximum switch
36MVA
36MVA
6MVA
power
Switching speed
Behaviour after
destruction
On state losses
Switching losses
Gate driver
Gate driver power
consumption
Transcribed Image Text:Compare the switching devices listed below according to the table provided Comparison: BJT, MOSFET & IGBT Device BJT MOSFET IGBT characteristics Voltage rating High<1KV High<lkV Very High >1KV Current rating Input Drive Input impedance Output impedance Switching speed cost Comparison: BJT, MOSFET & IGBT GTO Item IGCT IGBT Maximum switch 36MVA 36MVA 6MVA power Switching speed Behaviour after destruction On state losses Switching losses Gate driver Gate driver power consumption
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