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Consider a crystal made of silicon atoms. All 14 electrons in each silicon atom participate in electronic polarizability. If the electronic polarization resonant frequency f0 of silicon is found to be 4.9x10^15[Hz], and electronic polarizability is 4.15x10^-40 Fm^2.   1. Obtain static dielectric constant εr(0) using the Clausius-Mossotti equation.

Consider a crystal made of silicon atoms. All 14 electrons in each silicon atom participate in electronic polarizability. If the electronic polarization resonant frequency f0 of silicon is found to be 4.9x10^15[Hz], and electronic polarizability is 4.15x10^-40 Fm^2.   1. Obtain static dielectric constant εr(0) using the Clausius-Mossotti equation.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Consider a crystal made of silicon atoms. All 14 electrons in each silicon atom participate in electronic

polarizability. If the electronic polarization resonant frequency f0 of silicon is found to be 4.9x10^15[Hz], and electronic

polarizability is 4.15x10^-40 Fm^2.

 

1. Obtain static dielectric constant εr(0) using the Clausius-Mossotti equation.

 

2. In measuring complex dielectric constant ε(ω) = ε’(ω) +jε’’(ω), you identified a polarization mechanism that

has the maximum energy loss at frequency f = 1[GHz]. Using ε’(0) from question (1) and ε’’ = 4 at f = 1[GHz],

plot ε’(ω) and ε’’(ω) as a function of f.

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