Consider a gallium arsenide sample at T-300 K with majority carrier electron concentration 106 cm. Assume electron and hole mobilities given in Table. Calculate the drift current density if the applied electric field is E= 10 V/cm. Typical mobility values at 7 300 K and low doping cONcentrations A. (cm/N-s) P, (cm/N.s) 5 × 10" cm 1.8 × 10 c 2.4 x 10 em 480 Silicon Gallium arsenide Germanium 1350 8500 3900 400 1900

Consider a gallium arsenide sample at T-300 K with majority carrier electron concentration 106 cm. Assume electron and hole mobilities given in Table. Calculate the drift current density if the applied electric field is E= 10 V/cm. Typical mobility values at 7 300 K and low doping cONcentrations A. (cm/N-s) P, (cm/N.s) 5 × 10" cm 1.8 × 10 c 2.4 x 10 em 480 Silicon Gallium arsenide Germanium 1350 8500 3900 400 1900