Consider the diode to turn on "hard" at Vp-0.7 for any current i,2 OmA. Sketch the transfer characteristic. Label the voltage where the diode turns on and turns off, and show the limit voltage. 10 2 -1 -2 10 10 9 8 65432 1012 34567 89 10 VI
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- The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where R1 and R2 are the resistances at temperatures T1 and T2, respectively, and is known as the temperature coefficient of resistance. If a copper wire has a resistance of 55 at 20C, find the maximum permissible operating temperature of the wire if its resistance is to increase by at most 20. Take the temperature coefficient at 20C to be =0.00382.(a) Find the worst-case values of the Q-point current for the diode shown using the ideal diode model if the resistors all have 10 percent tolerances. (b) Repeat using the CVD model with Von =0.6 V.A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A
- A 1N4738A zener diode has a ZZ of 4.5 Ω. Taking the data from the datasheet we have VZ = 8.2 V with a test current, IZ, of 31 mA. What is the voltage across the zener terminals when the current is 15 mA? When the current is 55 mA? Make the representation of the values by means of their curve characteristic.a) Use the diode’s characteristic equation,ID=Is exp(VD/VT), to determine the currentsourceIso that the output voltage is 1.5 V. b) If a load is attached to the output that draws 1 mA, what is the output voltage? c) If the circuit heats up to 40◦C, what is the output voltage without a load?Given the clamper circuit below, assume that the value of R and C are large enough sothe voltage across the capacitor does not change significantly during the interval of time.a. Using the simplified diode model, simulate the action of the circuit when the Silicon diode isin forward and reverse bias condition and measure the corresponding output voltage.b. Draw the complete output waveform of the circuit
- The diode current in a p-n junction is modeled exponentially (given below.) When the p-n junction is polarized with 0.7V and 0.75V, the currents flowing through the diode are again measured on the basis of 1.36 mA and 7.20 mA. Accordingly, what is the ideality factor? (Note: Take the thermal voltage as mV)A diode is doped with NA=1018/cm3 on the p-type side and ND=1018/cm3 on the n-type side. (a) What are the values of pp, pn, np, and nn? (b) What are the depletion-region width wdo and built-in voltage?At what input voltage is necessary that can open the diode considering a voltage drop across the diode, VD=0.9V after the diode breakover? NO NEED TO COMPUTE FOR CURRENT
- The npn transistor is connected in an alternate“diode” configuration. Use the transport model equations to show that the i-v characteristics of this connection are similar to thoseof a diode as defined. What is thereverse saturation current of this “diode” if IS =5 × 10−16 μA, βF = 60, and βR = 3?Assuming the diodes to be ideal, plot the output waveform (Vo) of the circuit shown inFig.1. Make sure to include all the necessary analysis to justify your results.In PN junction in series with a 100 ohms resistor, is forwarded biased. So that a current of 100 mA flows. If the voltage across this combination is instantaneously reversed at t = 0 current through diode is approximately given by: