2. Current Mirror: Consider the circuit shown below. Assume that both of the transistors arematched, meaning: 1) K„' is the same for both devices M1 and M2, and is equal to 1mA/V?; 2) Vr= 0.5V for both M1 and M2. Recall that K= K,' (W/L), where W is the width and L is the lengthof the MOSFET. Further assume that VD.3V and Vo is large enough that M2 operates in thesaturation regime.VDDOVoIREFM1w,H M2W2L2In what mode does M1 operate and why?b. Find the relationship between I, and IREF in terms of the MOSFET parameters.c. Find VGs if IREF= 10mA, W,= 10µm, and L, = 1µm.d. Find Io under the conditions in part (c) if W2= 20µm and L,= 1µm.What is the minimum value for Vo to ensure M2 is in saturation under the conditions of part(d)?а.е.

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Engineering

Electrical Engineering

Current Mirror: Consider the circuit shown below. Assume that both of the transistors are

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Answer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.
Answer ASAP. I'll upvote. Thank you. Given: The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal ofM3? If yes, then where is it? If no, then what happens to the small signal model?).
What transistor configuration is used? Calculate the values of VE, IE , IC and VC 3. Draw the ac equivalent circuit. Show all values.
Please answer ASAP, I'll upvote... The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the drain current of M2 given that IBIAS = 2mA and VOUT = 2.5V.
4) By drawing the small signal model of the circuit given below, we can determine the total voltage and current gain values of the circuit, without the bypass capacitor on and without the bypass capacitor. Calculate separately for the two cases as it will be in the circuit (connected to the emitter end of the transistor). (β = 100, rS = 600 Ω, R1 = 27 KΩ, R2 = 4.7 KΩ, RC = 3.3 KΩ, RE = 680 Ω, RL= 15 KΩ, VCC = 10 V)
For the circuit shown, let VCC = 3.3 V, RE = 500 Ω, RC = 4 kΩ, R1 = 85 kΩ, R2 = 35 kΩ, and β = 150. Using approximation, determine the Q-point parameters: IBQ, ICQ, and VCEQ. Indicate the exact numerical values, following the given unit.
1. Discuss the common source characteristics of the n-channel FET used. 2. From the characteristics, obtain the following parameters, Ipss, gn and V. 54 Exp.No. (8): Field Effect Transistor Characteristics 3. Check equation (1) for Vgs = (-0.4), (-0.8) V. 4. Deduce equation (2) from the definition of g,, and using equation (1). 5. Obtain the value of g, of the point Vgs = - 0.8V from the transfer characteristics, then check equations (2) and (3).
Considering the given transistor circuit and given values(β=60; V BE =0,5 V; VCC =15V; R E=1K ; R c=10K ; R1=60K ;R2=30K ).a. Find the base, collector, and emitter currents b. Find the voltage gain of this circuit c. Find the voltage gain by ignoring the capacitor connected to the emitterd. Briefly describe the transistor active zone and state its importance
An npn transistor with IS = 5 × 10−16 μA, αF =0.95, and αR = 0.5 is operating with VB E = 0.3 Vand VBC = −5 V. This transistor is not truly operating in the region defined to be cutoff, but we still saythe transistor is off. Why? Use the transport modelequations to justify your answer. In what region isthe transistor actually operating according to ourdefinitions?
Consider a voltage-divider configuration of n-channel enhancement-type MOSFET where R1 = 12 MΩ, R2 = 7 MΩ, RD = 3 kΩ, RS = 1 kΩ. The MOSFET has a threshold voltage VGS(Th) = 3V, and one example point on the transfer characteristics curve is VGS(on) = 6V, ID(on) = 5 mA. Determine VGSQ, IDQ, Vs, VD, VDS assuming VDD = ( 80 ÷ 10 ) +20 V
For the transistor , IS = 2.5 ×10−16 μA, βF = 100, and βR = 5. (a) Label the collector, base, and emitter terminals of the transistor.(b) What is the transistor type? (c) Label the emitterbase and collector-base voltages, VE B and VC B, andthe normal directions for IE , IC, and IB. (d) Find thevalues of IE , IC, IB, VC B, and VE B if I = 300 μA
In the Mosfet circuit given below, R1+R2=50 kΩ, RD= 7.5 kΩ, VDD= 5V, VTP= -0.8 V, Kp= 0.2 mA/V2 is given. Calculate the ID current by determining the working region of the mosfet.