D7.4. In the neighborhood of a certain semiconductor junction the volume charge density is given by po = semiconductor material is 10 and the junction area is 2 x 10-7 m2. Find: (a) Vo; (b) C; (c) E at the junction. 750 sech 10°nx tanh nx C/m³. The dielectric constant of the Ans. 2.70 V; 8.85 pF; 2.70 MV/m

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D7.4. In the neighborhood of a certain semiconductor junction the volume charge
density is given by Po =
semiconductor material is 10 and the junction area is 2 x 10-7 m2. Find: (a) Vo; (b) C;
(c) E at the junction.
750 sech 106TX tanh nx C/m³. The dielectric constant of the
Ans. 2.70 V; 8.85 pF; 2.70 MV/m
Transcribed Image Text:D7.4. In the neighborhood of a certain semiconductor junction the volume charge density is given by Po = semiconductor material is 10 and the junction area is 2 x 10-7 m2. Find: (a) Vo; (b) C; (c) E at the junction. 750 sech 106TX tanh nx C/m³. The dielectric constant of the Ans. 2.70 V; 8.85 pF; 2.70 MV/m
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