Design a bias stable circuit in the form of figure 2 to operate at Ico= 0.8 mA, VCEQ =4 V, and VRE = 0.7V. Given ß = 120. Vcc = 10 V RC R1 Cc2 RL = 1 k2 R2 CE RE Figure 2 wwH ww
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- A 10 V Zener diode is used to regulate the voltage across a variable loadresistor. The input voltage Vs varies between 13 and16 V. The loadcurrent (??) varies between 10 and 85 mA. The minimum Zener current is15 mA. Findi. The maximum value of Rsii. The maximum power dissipated by the Zener diode, using the value ofRs.The mode of operation for the D-MOSFET is Select one: a. the ohmic region only b. the enhancement mode only c. both the depletion and enhancement modes d. the depletion mode onlyNOTE: FOR ALL CIRCUITS SHOWN IN THIS QUIZ ASSUME THAT: β= 100 (for all transistors) ; Early voltage equal to infinity. 1.- In the circuit of figure Nº A, the secondary voltage Vs is 15 volts rms with a frequency of 60 Hz, R equal to 100 Ohms and C equal to 1000 microfarads. The diodes are silicon (Vd = 0.7 volts) and the Zener diode is 15 volts. Determine:a) The magnitude of the ripple voltage at Cb) The Magnitude of the Peak Inverse Voltage (PIV) for D1 and D2
- Can someone explain this problem step by step? How do I know is in active more, or saturation mode? If you know those conditions , how do we suppose to work it out. Also why step 2 and 3 the current are almost the sameA loaded zener regulator has a VZ of 11 V with IZ equal to 23 mA, with IZK equal to 0.25 mA, ZZ equal to 8 Ω and a PD (max) equal to 1 W. The value of the resistance R is equal to 32 Ω. Determine the values of the output voltage with IZK and IZM. Get the value of the minimum load resistance that can be used to keep the zener diode regulating.Prepare the comparison table for the Power semiconductor devices 1)Integrated gate-commutated thyristor (IGCT) 2) Static induction thyristor (SITH) 3)Static induction transistor (SIT) .(Symbol, VI characteristics, Application, Voltage & Current rating)
- 2. Given:VCC: 16 voltsRB1: 7000 ohmsRB2: 50 ohmsRB3: 50 ohmsRB4: 1500 ohmsB=beta: 100RE: 750 ohmsRC: 500 ohmsVCE: ? voltsGiven the schematic below and the following assumptions: Forward Voltage of D1 and D2 are 5V VBE,ON = 0.7V and VCE,Sat = 0.6V Do the following: Equate R2 to 500Ω. Assume that the BJT is operating in Forward Active mode and that both diodes are on. Verify if the assumptions are correct. If not correct, determine what state the BJT (Forward Active, Saturation, Cutoff or Reverse Active) and diodes (On or Off) are in. Equate R2 to 1,000,000Ω. Assume that the BJT is operating in Forward Active mode and that both diodes are on. Verify if the assumptions are correct. If not correct, determine what state the BJT (Forward Active, Saturation, Cutoff or Reverse Active) and diodes (On or Off) are in.Silicon BJT (β=120) and Germanium BJT (β=120) VCE in circuitCalculate its value. Comment the circuit
- topic: diodes the data in the table is obtained using electronics workbench simulation. answer the following blanks using computation. (the second picture is the circuit illustration in forward biasing) given: Vs = 10V and R1 = 1.2KΩA conductor carries a current that is equivalent to a 5-amp continuous current in one direction and a superimposed full-wave rectifier current in the opposite direction. What is the maximum value of the latter if the average conductor current is zero?(i) With neat sketch explain the cross sectional view and I-V characteristics of the device which is used in low on state loss and small switching frequency operations. (ii) Write FOUR demerits of the above mentioned power semiconductor device.