Example 1:-The BJT transistor with B dc passes between 10 and 20, current 10A. Assuming VCE (sat)= 1V, VBE (sat) = 1.5V and ODF = 5, it is desirable to calculate the transistor power loss.%3D%3DExample 2:-A BJT transistor in the on state has Bdc = 10, VBE (sat) = 0.8V, VCE (sat) = 0.6V and R on= 0.02 ohms. The connection in the alligator of two of these transistors must pass current of100A in the on state. Determine the power losses of the connected state (ignore the basecurrent of the driver transistor)%3D%3D

β=10 to 20 Current(Ic)=10A VCE(sat)=10V VBE(sat)=1.5V ODF=5

Answered: Example 1:- The BJT transistor with B…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

Show your solutions FIND lcsat, lbsat, Vrc, Vrb. Determine the minimum lb value that will turn the transistor "ON"
Replace the MOSFET by a four-terminal device with its substrate connected to VSS = −12 V, and find the new Q-point for the transistor. Assume VTO = 1 V, γ = 0.75 √V, and 2φF = 0.6 V. What is the new value of VTN?
For the circut below measurement indicates that Vb = -1.5V. a) Assuming Vbe=0.7, calculate Ve,α,β and Vc. b) If a transistor with β = ∞ is used, what values of Vb, Ve and Vc result ?
IBQ, ICQ, VE, VCEQ, VC for a transistor with VBE = 0.6 and β = 50. Draw and label the DC load-line. From b, if transferred to the center of the load-line, determine the new values of R1 and R2 and draw the final circuit.
For the transistor , IS = 4 × 10−16 μA,βF = 75, and βR = 4. (a) Label the collector, base,and emitter terminals of the transistor. (b) What isthe transistor type? (c) Label the emitter-base andcollector-base voltages, and label the normal direction for IE , IC, and IB. (d) Write the simplified formof the transport model equations that apply to thisparticular circuit configuration. Write an expressionfor IE /IB. Write an expression for IE /IC. (e) Findthe values of IE , IC, IB, VC B, and VE B.
Explain the construction and working of the BJT (common emitter), withcharacteristics curve.
A depletion-mode NMOS transistor has VTO =−1.5 V, 2φF = 0.75 V, and γ = 1.5√V. Whatsource-bulk voltage is required to change this transistor into an enhancement-mode device with athreshold voltage of +0.85 V?
In order to express the effect of the internal capacitors of BJT and the high frequency reception, the current gain expression depending on the frequency (Figure b) (hfe) is used in the case of collector emitter short circuit, voltage source connected at base end and emitter grounded (Figure la).. The catalog information of the 2N2222 transistor is given in Figure Ic. In the catalogue, when Ic=20 mA, it is seen as fT=250 MHz. a) Find the total capacitor effect for the case where gm> > wCμ. (Cpi) + (Cμ) = ?pF
Derive the BJT operating points for the circuit shown.
Explain the concept of BJT biasing and for the fixed bais circuit. Draw the circuit and derive the expression for DC point. Determine DC point if Vcc =14 v , Beta =100, Rc = 2.5 K ohm, Rb = 230k ohm and Vbe =0.7V.
BETA(DC)=100, BETA(AC)=300, VBEQ=0.7V VT=25mV Find the IS current of the transistor and the current flowing through the emitter arm when polared?
What Transistor AC Equivalent model is the most preferred for analysis, based on our text references and why it is preferred?? When preparing a BJT Circuit for analysis, what are the difference in preparing for DC Analysis and AC Analysis? What steps are followed when solving the circuit in DC and AC Analysis? Do all BJT Circuit configuration has a 0 degree phase relationship with the input to output? If no, what circuit configurations is has its input-output out of phased and by how much?

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