Exercise # 3 - MOSFET Bias The following circuit is used to bias an NMOS type MOSFET transistor. In the circuit, we want the DC voltage marked Vx to have a value of 0 V. provided by the transistor The following is data manufacturer: K 350μA / V² A (lambda) 50μV-¹ -5V VTH 0.64V Threshold voltage VB Part A - Calculation of current in the drain (ID) From the given information, determine the value of the current in the drain (I_D) Justify your result using proper circuit analysis techniques. Part B - Calculation of the voltage between Gate-Source (V GS) Considering the information and the analysis carried out up to this point, determine the value that the voltage between gate and source must have (VGS) Justify your result using proper circuit analysis techniques. Part C-Proof of the saturation condition Considering the information and analysis carried out up to this point, show that the transistor is in the conditions of the saturation region. s RB ROWN SkQ +5V RD 12kQ Vx

Exercise # 3 - MOSFET Bias The following circuit is used to bias an NMOS type MOSFET transistor. In the circuit, we want the DC voltage marked Vx to have a value of 0 V. provided by the transistor The following is data manufacturer: K 350μA / V² A (lambda) 50μV-¹ -5V VTH 0.64V Threshold voltage VB Part A - Calculation of current in the drain (ID) From the given information, determine the value of the current in the drain (I_D) Justify your result using proper circuit analysis techniques. Part B - Calculation of the voltage between Gate-Source (V GS) Considering the information and the analysis carried out up to this point, determine the value that the voltage between gate and source must have (VGS) Justify your result using proper circuit analysis techniques. Part C-Proof of the saturation condition Considering the information and analysis carried out up to this point, show that the transistor is in the conditions of the saturation region. s RB ROWN SkQ +5V RD 12kQ Vx

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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ı just need fınal answer Considering the dc operating conditions of the NMOS circuit in the figure, gm = 1.5 mS was obtained. Also, the load current IL flowing through RL when Rsig1 = 2 kΩ, Rsig2 = 3 kΩ, RF = 60 kΩ, R1 = 50 MΩ, R2 = 12 MΩ, RD = 4.7 kΩ, RS = 1.2 kΩ and RL = 13.3 kΩ What would be the value of ? (Vi1 = 20 mV, Vi2 = 30 mV) NOTE-1: Capacitors are negligible at mid-band frequency. NOTE-2: The NMOS output impedance will be taken into account and its value is rd = 20 kΩ. a. 0,28 mA b. 0,20 mA c. 0,84 mA d. 0,40 mA e. 0,52 mA f. 0,72 mA g. 0,60 mA h. 0,12 mA
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Considering the dc operating conditions of the NMOS circuit in the figure, gm = 4.1 mS was obtained. Also, the load current IL flowing through RL when Rsig1 = 2 kΩ, Rsig2 = 3 kΩ, RF = 60 kΩ, R1 = 50 MΩ, R2 = 12 MΩ, RD = 4.7 kΩ, RS = 1.2 kΩ and RL = 10.2 kΩ What would be the value of ? (Vi1 = 20 mV, Vi2 = 30 mV) NOTE-1: Capacitors are negligible at mid-band frequency. NOTE-2: The NMOS output impedance will be taken into account and its value is rd = 20 kΩ.
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