Find the equivalent total resistance.
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Q: current I i
A: Solution Find current Using kvl I was calculate i
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Q: Solve for the total resistance and total current
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Q: 20. Determine the Resistance between terminal a and b as shown in the figure: (Solution) R ao R R bo
A: In this question we need to find a equivalent resistance between terminal a and b
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Q: .Find Vth for the circuit below 10v
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Q: The internal resistance of the ideal voltage source is small True O False O
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A: Current flowing through circuitP=VII=PV=500100=1 APower across coo.1 (complex)S=VI=50X5=250VA
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Q: Please solve for V, I, R, and P. Also the totals for the whole circuit as well.
A: Given: VT=100 VR=50 Ω Now calculate rest of the unknown values; I1=VTR1I1=10050I1=2…
Q: Q5) Find all current and voltage if a = 0.99 v+10 V V--10 V
A: we need to find all the current and voltages.
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Q: For the circuit shown in the figure, the value of the equivalent resistance Rb is:
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Q: 2. Find the equivalent resistance Rab in the circuits of Figure below. a o 10Ω 602 30 Ω ww- ww- 20Ω
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Q: find total resistance
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Q: In the circuit of the figure, V is
A: The output voltage of the amplifier circuit can be calculated by using the kirchhoff's current law.
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Q: Q) Shunt PMMC was designed by using indirect method to provide an ammeter with current range 5A,…
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A: detail solution in the image
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- An Si abrupt p-n junction is doped with N. = 109 cm on p-side and N, = 5 x 10" on n-side. Findthe penetration of transition region into n-side at equilibrium (300 K).(a) 0.455 um(b) 0.00227 am(c) 0.227 jum(d) 0.00455 umof con An p-type piece of silicon experiences an electric field equal to 0.2 V/um. Calculate the velocity of holes in this material. =1350 cm/s, H₂=480 cm/s Select one: O a 9.6x107 m/s O b. 9.6 x 10³ m/s Oc. None of these O d. 9.6x10³ m/sInductive Circuits Fill in all the missing values. Refer to the following formulas: XL=2fLL=XL2ff=XL2L Inductance (H) Frequency (Hz) Inductive Reactance ( ) 1.2 60 0.085 213.628 1000 4712.389 0.65 600 3.6 678.584 25 411.459 0.5 60 0.85 6408.849 20 201.062 0.45 400 4.8 2412.743 1000 40.841
- -3 An Si abrupt p-n junction is doped with N 10" cm on p-side and N, =5x10" on n-side. Find the penetration of transition region into n-side at equilibrium (300 K). (a) 0.455 um (b) 0.00227 um (c) 0.227 um (d) 0.00455 um Answer O A Submitb) Use the ALU 74181 in the figure below and the tables (one is enough; second maybe, need to check the new kit) to implement : A + B, A – B, A. B. (MSB) (LSB) 10 (MSB) F3 F2 F1 FO S3 Cn+4 16 s2 20 U14 15 S1 14 so A3 A2 A1 AO B3 B2 B1 B0 M Cn 24 23 22 21 28 27 T26 25 (LSB) (MSB) (LSB)(MSB) (LSB) And given that under M = 1 the circuit performs the following arithmetic and logic functions according to Table 11.1. Input selection S3 Output M-H S2 SI Cn=L. F3 F2 F1 FO A 1 -A В -B A&B AxB 1 A'B 1 Ax(-B) (-A)xB (-A)x(-B) 1 1 ACTIVE HIGH DATA M-L: ARITHMETIC OPERATIONS SELECTION M-H LOGIC s3 s2 s1 so Ino carry) (with carry) F-A PLUS 1 F- LA + B) PLUS 1 F- (A + BI PLUS 1 FUNCTIONS L L F-A F-A+B F-AB F-A H FA+B F-A+T F- MINUS 1 12s COMPL) F-A PLUS AB F- IA + BI PLUS AB L L L L F-0 F-ZERO F- AB F-A PLUS AB PLUS 1 F- (A + BI PLUS AB PLUS 1 L L L H L F-AOB F- AB L L F-A MINUS B MINUS 1 F-A MINUS B F- AB MINUS 1 F- A F-A PLUS AB PLUS1 F-A PLUS B PLUS 1 F- IA + B PLUS AB PLUS 1 L H L F-A PLUS AB…24 Emd I & V in Fig.(17) assuming ideal diodes. +1ov Eska 10kn IJ文D エしキD YD2 5 k -10V -100 (b) (a) FiS CI7)
- 9. Which of the following equation represents mass semiconductors in electronic circuits? action law for 2 a) n xp = n₁² b) n x p = n₁ c) n xp = n³ 3 d) n xp = n₁¹/²9:0. O O a 46ll KOREK Quiz1.jpg > Q/ For the circuit shown below find IT, VRL, and V.. IK(ohm) D Da R1 ITA Ds D4 Si Ge ideal Si VT 2K(ohm) 12v 3K(ohm) 2.5K(ohm)A naull uo ülgiw print.pdf - Adobe Acrobat Reader DC File Edit View Sign Window Help Home Tools سنوات ميد السيمي . . . Sign In 13 / 28 21.8% L Search 'Strikethrough' LO Export PDF Edit PDF Create PDF Comment 15 In semiconductors the term "hole" defines a location in the valence band that can be filled with p-type impurities. Combine Files ut of Select one: O True EI Organize Pages O False * Compress PDF 2 Redact Create, edit and sign PDF forms & agreements Free 7-Day Trial المسوحة ضوئيا ب CamScan ner 11:52 PM 1/13/2021 图
- d. ن Hılı www 2 K 3.6 V e. f. Vi 500 Ω . D₁ D₂ D3 Diodes D₁, D2 and D3 are identical diodes with forward voltage of 0.7 volts. v; and vo are the circuit's input and output voltages respectively. Vo 2 = If D2 and D3 are conducting, express å in terms of v₁. Under what input conditions will none of the diodes conduct? If none of the diodes are conducting, express v, in terms of v₁. 'aveform of theA half wave rectifier, operated from a 50Hz supply uses a 1000μF capacitance connected in parallel to the load of rectifier. What will be the minimum value of load resistance that can be connected across the capacitor if the ripple% not exceeds 5? 115.47Ω 167.98Ω 451.350 Ο 114.87ΩFigure Q1 (a) (b) For the system shown in Figure Q1 (b), evaluate the system single block diagram with the input of F(s) and the output of X(s). 33 N/m 3 kg 15 N-s/m 3 N/m 5N-sm Figure Q1 (b) A BI 19 1366 x 768px II !!