For Ge semiconductor, assume the Fermi energy levelis 0.1 eV below the conduction band energy Ec. Let theabsolute temperature T for items i and ii be 200 K.Find the number of quantum states between Ec and Ec +7 x kbTi.ii.Determine the probability of a state being empty of anelectron at Ec+ 7 x kbT.ii.Find the temperature at which there is an electron at thestate Ec+ 0.7 « kbT with probability 30%iv.Repeat item iii by using the Boltzmann approximationrather than the Fermi-Dirac distributionFind the difference in temperature between items i andv.iv above and express this difference as percentage|

The present problem 5 sub-parts. As per bartleby policy, we can answer the first three. Kindly…

For Ge semiconductor, assume the Fermi energy level is 0.1 eV below the conduction band energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the number of quantum states between Ec and Ec + 7 x kbT Determine the probability of a state being empty of an ii. electron at Ec+ 7 x kbT. iii. Find the temperature at which there is an electron at the state Ec+ 0.7 < kbT with probability 30% iv. Repeat item iii by using the Boltzmann approximation rather than the Fermi-Dirac distribution Find the difference in temperature between items ii and V. iv above and express this difference as percentage

For Ge semiconductor, assume the Fermi energy level is 0.1 eV below the conduction band energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the number of quantum states between Ec and Ec + 7 x kbT Determine the probability of a state being empty of an ii. electron at Ec+ 7 x kbT. iii. Find the temperature at which there is an electron at the state Ec+ 0.7 < kbT with probability 30% iv. Repeat item iii by using the Boltzmann approximation rather than the Fermi-Dirac distribution Find the difference in temperature between items ii and V. iv above and express this difference as percentage