For Ge semiconductor, assume the Fermi energy level is 0.15 eV below the conduction bandenergy Ec. Let the absolute temperature T for items i and ii be 200 K.i. Find the number of quantum states between Ec and Ec + 5 x KbT.ii. Determine the probability of a state being empty of an electron at Ec + 5 x KbT.ii. Find the temperature at which there is an electron at the state Ec + 0.5 x KbT with probability 30%.iv. Repeat item ii by using the Boltzmann approximation rather than the Fermi-Dirac distribution.v. Find the difference in temperature between items ii and iv above and express this differenceas percentage.

Given Data The fermi level is :EC−Ef=0.15 eV The absolute temperature is:T=200K Mass of electron…

For Ge semiconductor, assume the Fermi energy level is 0.15 eV below the conduc energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the number of quantum states between Ec and Ec + 5 x KbT. ii. Determine the probability of a state being empty of an electron at Ec + 5 x KbT. iii. Find the temperature at which there is an electron at the state Ec + 0.5 x KbT wit iv. Repeat item iii by using the Boltzmann approximation rather than the Fermi-Dira v. Find the difference in temperature between items ii and iv above and express th as percentage.

For Ge semiconductor, assume the Fermi energy level is 0.15 eV below the conduc energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the number of quantum states between Ec and Ec + 5 x KbT. ii. Determine the probability of a state being empty of an electron at Ec + 5 x KbT. iii. Find the temperature at which there is an electron at the state Ec + 0.5 x KbT wit iv. Repeat item iii by using the Boltzmann approximation rather than the Fermi-Dira v. Find the difference in temperature between items ii and iv above and express th as percentage.