3) for the belaw, find the Q-Point for bolh diades usinga) Ideal Diode Model b) CUD Modeliw/ VoN= 0.4v.Ideal Dioce MadelVo= Ov, for ID>O andID-OA, tor Vo E OV121n1VCVD MadelVD VON, for ID>O and/ID=OA for Vo VoN

A diode is an electrical component having two terminals that exclusively conducts current in one…

Answered: for the belaw, find the Q-Point for…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

A diode has wdo = 1.5 μm and φj = 0.8 V. (a) What is the depletion layer width for VR =5V? (b) For VD = −10 V?
A 1N4738A zener diode has a ZZ of 4.5 Ω. Taking the data from the datasheet we have VZ = 8.2 V with a test current, IZ, of 31 mA. What is the voltage across the zener terminals when the current is 15 mA? When the current is 55 mA? Make the representation of the values by means of their curve characteristic.
A diode is doped with NA=1018/cm3 on the p-type side and ND=1018/cm3 on the n-type side. (a) What are the values of pp, pn, np, and nn? (b) What are the depletion-region width wdo and built-in voltage?
A diode has a doping of ND = 1015/cm3 on the n-type side and NA = 1017/cm3 on the p-type side. What are the values of wdo and φj? What is the value of wd at a reverse bias of 10 V? At 100 V?
A diode is doped with NA = 1018/cm3 on the p-type side and ND =1019/cm3 on the n-type side. (a)What is the depletion-layer width wdo? (b) What are the values of xp and xn? (c) What is the value of the built-inpotential of the junction?(d) What is the value of EMAX? Use Eq. E(x) = 1 /εs ∫ ρc(x) dxand as shown.
What is the zero-bias junction capacitance/cm2 for a diode with NA = 1018/cm3 on the p-type side and ND = 1020/cm3 on the n-type side? What is the diode capacitance with a 3-V reverse bias if the diode area is 0.05 cm2?
Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?
An abrupt pn junction, a diode, is fabricated using 1017 acceptor atoms cm-3 on the p side and 10^15 donors cm^-3 on the n side of the diode. The geometry of the pnjunction is shown in the figure below.Assume that when the diode is illuminated with light (with photon energy > bandgap energy) 10^21 EHPs are generated per cm^-3 per sec. Also Assume that the electron and hole recombination times are 10 microsec and that Dp =12 cm2/s and Dn = 18 cm2/s . If w =4mm, t = 4mm L1 = 2mm and L2 = 2mm, calculate the resistance of the p side and the n side of the pn junction due to (δn and δp), assume that they act as two resistors in series and determine the current through the pn junction if the reverse bias voltage is 2V. T = 300K.
Make a sketch of the I–V characteristic curve for a diode with Is = 0.02 pA for VD values from zero to 0.7 V. Use the approximation ID = Is e^(Vd/VT) What is the slope of a line tangent to the curve at ID = 2 mA?
Hello, can someone help explain this to me? TIA.. Calculate Vbi in a silicon pn junction for Nd = 1014 cm-3and Na = 1016 at 310K.
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for the belaw, find the Q-Point for both diades using a) Tdeal Diode Madel b) CUD Modeliw/ Vow= 0.4v. Ideal Diock Madel Vo= Ov, for ID>O and ID-OA,tor Vo ON 12 04 CVD Madel VD VON, for ID>O and ID=OAfor VR- Yol