Ga is to be diffused into a bulk (semi-infinite) piece of pure Si (i.e. there is no Ga in the Si initially). The concentration of Ga at the surface of the Si piece is held constant at a value of 2.5000 x 1018 atoms/cm3. After treatment at 1200 C, the Ga concentration at 0.6 micrometers below the Si surface is found to be 8.9500 x 1017 atoms/cm3.a) If this concentration value was produced after a period of 35 hours, find the diffusion coefficient for Ga in Si at 1200 C?b) If the activation energy for Ga diffusion in Si is 3.8 eV/atom, what process temperature will be required to obtain the same concentration (i.e. 8.9500 x 1017 atoms/cm3) at a depth of 0.6 microns in half the diffusion time?

Given: Initial concentration of Ga on the Si piece, C0 = 0 Concentration of Ga on the Si surface, Cs…

Answered: Ga is to be diffused into a bulk…

Introduction to Chemical Engineering Thermodynamics

8th Edition

ISBN:9781259696527

Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart

Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart

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Ga is to be diffused into a bulk (semi-infinite) piece of pure Si (i.e. there is no Ga in the Si initially). The concentration of Ga at the surface of the Si piece is held constant at a value of 2.5000 x 1018 atoms/cm3. After treatment at 1200 C, the Ga concentration at 0.6 micrometers below the Si surface is found to be 8.9500 x 1017 atoms/cm3.

a) If this concentration value was produced after a period of 35 hours, find the diffusion coefficient for Ga in Si at 1200 C?
b) If the activation energy for Ga diffusion in Si is 3.8 eV/atom, what process temperature will be required to obtain the same concentration (i.e. 8.9500 x 1017 atoms/cm3) at a depth of 0.6 microns in half the diffusion time?

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