GaAs is utilized to manufacture infrared light-emitting diodes (LEDs). The band gap is 1.42 eV, and the effective masses of electrons and holes are 0.067 and 0.45 of the free-electron mass, respectively. a. Calculate the intrinsic electron and hole concentration of pure GaAs at room temperature. b. What is the carrier concentration intrinsic? c. Where is the Fermi energy level located?
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GaAs is utilized to manufacture infrared light-emitting diodes (LEDs). The band gap is 1.42 eV, and the effective masses of electrons and holes are 0.067 and 0.45 of the free-electron mass, respectively.
a. Calculate the intrinsic electron and hole concentration of pure GaAs at room temperature.
b. What is the carrier concentration intrinsic?
c. Where is the Fermi energy level located?
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