Given that Rm =2 Ohms, Imfs = 10 mA, E=3 V, R, (such that Rx = 0.5 Ohms gives half scale deflation shunt type Ohmmeter) is found to be (in Ohms) : 225.5 119.6 None of the choices 313.7 96.5
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- 2. A certain zener diode has a maximum power rating of 300 mW at 40 deg Cand a derating factor of 1.4mW/deg C. Determine the maximum power the zener can dissipate at a temperature of 80 deg C. 3. From the datasheet, a 1N4728A zener diode has a ZZ of 10 0. The datasheet gives VZ = 3.3 V at a test current, IZ, of 76 mA. What is the voltage across the zener terminals when the current is 90 mA? When the current is 45 mA?You are tasked to design a dc power supply that operates from a single-phase ac supply (50Hz) with source inductanceof 1.5mH/phase. It is required to supply a dc load (resistive) with 55A at 322 Volt. Assume infinite inductive filtering andthe use of power diodes with a forward voltdrop of 0.7V. Consider the bridge converter topology and specify the followingdesign parameters,30) the loss in voltage due to commutation overlap;31) the r.m.s. ac supply voltage required;32) the overlap angle;33) the transformer utilisation factor;34) the rectification efficiency of the converter;35) the dc current rating of the rectifier diodes;36) the r.m.s. current rating of the rectifier diodes;37) the form factor of the diode current;38) the peak repetitive forward current rating of the rectifier diodes;39) the peak repetitive reverse voltage rating of the rectifier diodes.a. SketchtheoutputvoanddeterminethedcleveloftheoutputforthenetworkofFig.2.49. Repeat part (a) if the ideal diode is replaced by a silicon diode. Repeat parts (a) and (b) if Vm is increased to 200 V, and compare solutions using Eqs. (2.7) and (2.8).
- Explain what will happen to a semiconductor doped by equal concentration of donors and acceptor impurities? *Please provide the answer as in the texbook.TQ.Using IC that is approximately equal to IE. Determine the value of R1 in ohms, when VCC=16V, RC=2117 ohms, RE=354 ohms, VC=8 V and R2=4948ohmGiven a silicon sample of unknown doping. Hall measurement provides the following information: W = 1000 mm, A = 2.5 × 10-3cm2, I = 2 10-3 A, magnetic field = 500 Gauss, hall voltage of +150 mV. The majority carrier concentration is (per cm3)
- Please give the step-by-step solution.Determine the following: (1) Vrdg (2)Ardg (2) Iave/diode (4) Ipk/diode (5) Pl(ave) (6) PIV/diodeA silicon pn junction has the following doping condition: 10^(16)cm³ at n-type side and 10^(17) cm at p-type side.calculate total depletion width W, widths of depletion regions at p and n sides of the junction.where Vbi=0.754v Emax=0.0000165v/mDie per Wafer: Given a wafer of diameter 300mm and a chip size of 2cm x 2cm, estimate the number of good dies per wafer considering a yield of 85%.
- A conductor carries a current that may be regarded as equivalent to the sum of two components, one of them being a continuous direct current of 4.2 amp and the other a superimposed full-wave rectifier current. If the latter has a maximum value of 6.4 amp, calculate the average current in the wire if (a) both components have the same direction, (b) the two components are oppositely directed?Don't copy others work. provide correct solution Question (1)(a) Define homo-structure and hetero-structure devices with appropriate schematic diagram of such structures. (b) Explain the concepts of lattice matched hetero-structure. Sub: Optoelectronics Dept:EEEA conductor carries a current that maybe regarded as equivalent to the sum of two components, one of them being a continuous direct current of 4.2 amp and the other a superimposed half-wave rectifier current. If the latter has a maximum value of 8.3 amp, calculate the average current in the wire if (a) both components have the same direction, (b) the two components are oppositely directed?