O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd D 4x10 cm and Na 1x10 cm * and (b) additional 6x10 cm of Nd? Note: use Effective density of conduction band 2.8 x 10 9 cm . Effective density of valance band 1.04 x 10 19 cm 3. T= 300 K, Boltzmann constant 1.38x 1023 Kg s'K'.

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O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd =
4x10 cm and Na 1x10 cm and (b) additional 6x101 cm of Nd? Note: use Effective density of
-3
conduction band = 2.8 x 10 19 cm *. Effective density of valance band =1.04 x 10
19
cm
-3. T= 300 K,
Boltzmann constant = 1.38x 1023 Kg s?K'.
Transcribed Image Text:O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x10 cm and Na 1x10 cm and (b) additional 6x101 cm of Nd? Note: use Effective density of -3 conduction band = 2.8 x 10 19 cm *. Effective density of valance band =1.04 x 10 19 cm -3. T= 300 K, Boltzmann constant = 1.38x 1023 Kg s?K'.
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