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One way to manufacture transistors, which amplify electrical signals, is to diffuse impurity atoms into a semiconductor material such as silicon. Suppose a silicon wafer 0.1 cm thick, which originally contains 1 phosphorous (P) atoms for every 10 million Si atoms, is treated so that there are 400 P atoms for every 10 million Si atoms at the surface. Calculated the concentration gradient (a) in atomic percent/cm and (b) in atoms/cm3.cm. The lattice parameter of silicon is 5.4307 Å. Hint: Silicon is in a diamond cubic 400 P atoms Cs 107 Si atoms Structure with 8 atoms/cell. Silicon wafer Ax = 0.1 cm 1 P atom 107 Si atoms 55

One way to manufacture transistors, which amplify electrical signals, is to diffuse impurity atoms into a semiconductor material such as silicon. Suppose a silicon wafer 0.1 cm thick, which originally contains 1 phosphorous (P) atoms for every 10 million Si atoms, is treated so that there are 400 P atoms for every 10 million Si atoms at the surface. Calculated the concentration gradient (a) in atomic percent/cm and (b) in atoms/cm3.cm. The lattice parameter of silicon is 5.4307 Å. Hint: Silicon is in a diamond cubic 400 P atoms Cs 107 Si atoms Structure with 8 atoms/cell. Silicon wafer Ax = 0.1 cm 1 P atom 107 Si atoms 55

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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O One way to manufacture transistors, which amplify electrical signals, is to diffuse impurity atoms into a semiconductor material such as silicon. Suppose a silicon wafer 0.1 cm thick, which originally contains 1 phosphorous (P) atoms for every 10 million Si atoms, is treated so that there are 400 P atoms for every 10 million Si atoms at the surface. Calculated the concentration gradient (a) in atomic percent/cm and (b) in atoms/cm3.cm. The lattice parameter of silicon is 5.4307 Å. Hint: Silicon is in a diamond cubic 400 P atoms Cs = 107 Si atoms Structure with 8 atoms/cell. Silicon wafer Δx -0.I cm 1 P atom 10 Si atoms %3D 55
Transcribed Image Text:O One way to manufacture transistors, which amplify electrical signals, is to diffuse impurity atoms into a semiconductor material such as silicon. Suppose a silicon wafer 0.1 cm thick, which originally contains 1 phosphorous (P) atoms for every 10 million Si atoms, is treated so that there are 400 P atoms for every 10 million Si atoms at the surface. Calculated the concentration gradient (a) in atomic percent/cm and (b) in atoms/cm3.cm. The lattice parameter of silicon is 5.4307 Å. Hint: Silicon is in a diamond cubic 400 P atoms Cs = 107 Si atoms Structure with 8 atoms/cell. Silicon wafer Δx -0.I cm 1 P atom 10 Si atoms %3D 55
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