i need the answer quickly Q1: A particular intrinsic semiconductor has a bandgap energy of 1.32 eV and has a resistivityof 60 N.cm at T = 300 K. Neglecting the change in mobility with temperature, determine theresistivity of the semiconductor at T = 330 K.

We need to find out resistivity at given temperature

Q1: A particular intrinsic semiconductor has a bandgap energy of 1.32 eV and has a resistivity of 60 2.cm at T = 300 K. Neglecting the change in mobility with temperature, determine the resistivity of the semiconductor at T = 330 K.

Q1: A particular intrinsic semiconductor has a bandgap energy of 1.32 eV and has a resistivity of 60 2.cm at T = 300 K. Neglecting the change in mobility with temperature, determine the resistivity of the semiconductor at T = 330 K.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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i need the answer quickly

Q1: A particular intrinsic semiconductor has a bandgap energy of 1.32 eV and has a resistivity
of 60 N.cm at T = 300 K. Neglecting the change in mobility with temperature, determine the
resistivity of the semiconductor at T = 330 K.

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