Q3) For the circuit shown below, calculate: VPIS 1- Current I. 2- Resistance voltage VR. 3- VDI- 4- VD2. 5- VD3- E₁-10V 2 ΚΩ D₁ D₂ 2V Dy St [] E2-1V
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- Using the diagram, solve for the Rth, Vth, and load current (IL) through each resistance using Thevenin’s Theorem. Please draw the circuit diagram for each Rth and Vth computation.Using the following values for the circuit in the figure, find what is required in the questions? For the circuit in the figure, find the ones requested in the questions by using the following values? VDD= 30 V, IDSS=8 mA, VP=-6V, R1=110 MΩ, R2=18 MΩ RD=1.9 kΩ, RS=9.12 kΩ VD=? VS=? VDS=?Prove that VDS > VGS − VTH (saturation mode) in the circuit below. Show your complete solution.
- For the circuit in the figure, find the ones requested in the questions by using the following values? VDD= 30 V, IDSS=8 mA, VP=-6V, R1=110 MΩ, R2=18 MΩ RD=1.9 kΩ, RS=3,68 kΩ VG=? VGS=? ID=? VD=? VS=? VDS=?Using the following values for the circuit in the figure, find what is required in the questions? For the circuit in the figure, find the ones requested in the questions by using the following values? VDD= 30 V, IDSS=8 mA, VP=-6V, R1=110 MΩ, R2=18 MΩ RD=1.9 kΩ, RS=9.12 kΩ VG=? VGS=? ID=? VD=? VS=? VDS=?Need help with this Question The D-MOSFET circuit shown in Figure Q1(b) has IDSS = 3 mA and VGS(off) =−8 V. Given the following:R1 = 50 kΩR2 = 150 kΩRD = 1 kΩRS = 2 kΩVDD = +10 VVSS = −10 VDetermine VGS, ID and VDS.
- If R0= 44 milliohms and Ri= 736 ohms, what is R1 , R2, R3 in the equivalent circuit????Consider the circuit shown in the figure. Note that two currents are shown. Calculate the emfs ε1 and ε3.Use Kirchhoff’s laws to determine, for the network shown in Figure below, the current flowing in (a) the 20 Ω resistance, and (b) the 4 Ω resistance. Determine also (c) the p.d. across the 8 Ω resistance, and (d) the active power dissipated in the 10 Ω resistance
- a) Compare metallic foil vs semiconductor strain gauges (construction, advantages and disadvantages). b) Consider a Wheatstone bridge circuit (Figure 1) that has all resistances equal to 250 ?. The resistance R1 is a strain gauge that cannot sustain a power dissipation of more than 0.25 W. What is the maximum applied voltage that can be used for this bridge circuit? At this level of bridge excitation, what is the bridge sensitivity?Use the thevenin equivalent resistance and Vth =?. a) Calculate and plot the current flowing through the pn junctions of device #2 on your 3311 wafer as a function of voltage over the range of -3 volts to plus 1.5 (or so) volts on a linear scale. b) plot the I-V curve for the forward voltage on a log scale. c) What voltages correspond to 10 A/cm2, 100 A/cm2, 1000 A/cm2, 10,000 A/cm2 and 100,000 A/cm2? d) What is the current and current density when the applied voltage is equal to the built-in voltage? e) what are your thoughts on applying a voltage greater than the built-in voltage to a pn junction diode?