Q3. For the n-MOS (M) shown in Fig. 5, UnCox = 100 µA/V2, where un is the electron mobility in the channel and Cox is the oxide capacitance per unit area, threshold voltage VTH = 0.2 V and aspect ratio (W/ L) = 10. Channel length modulation effects are negligible (A = 0). a. VB = 0.7 V, find the transconductance gm in mA/N. b. At the bias point of VB mentioned in part a, what wouid be the small-signal resistance offered by M. (Neglect body effect and channel length modulation effects). c. In the circuit indicated in Fig. 6, two such MOSFETS (M1 = M2 = M) are connected. Find the minimum bias voltage VB, such that M2 will operate in the saturation region. Va M1 3V M2 M Fig. 5 Fig. 6

Q3. For the n-MOS (M) shown in Fig. 5, UnCox = 100 µA/V2, where un is the electron mobility in the channel and Cox is the oxide capacitance per unit area, threshold voltage VTH = 0.2 V and aspect ratio (W/ L) = 10. Channel length modulation effects are negligible (A = 0). a. VB = 0.7 V, find the transconductance gm in mA/N. b. At the bias point of VB mentioned in part a, what wouid be the small-signal resistance offered by M. (Neglect body effect and channel length modulation effects). c. In the circuit indicated in Fig. 6, two such MOSFETS (M1 = M2 = M) are connected. Find the minimum bias voltage VB, such that M2 will operate in the saturation region. Va M1 3V M2 M Fig. 5 Fig. 6

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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