Q4) A- Si P-N junction draw current 100 m Amps. at 292.5 K, if N type doped with atom 0.8 x 10o. 1/m3 and P-type doped with atom 0.25 x 10. 1/m3. If pure carriers density for Si is 2.5 x 10", 1/m3. Find reverse saturation current for Si PN junction.

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Q4)
A- Si P-N junction draw current 100 m Amps. at 292.5 K, ifN type doped
with atom 0.8 x 102o. 1/m3 and P-type doped with atom 0.25 x 101 1/m3. If
pure carriers density for Si is 2.5 x 10. 1/m3. Find reverse saturation current
for Si PN junction.
Transcribed Image Text:Q4) A- Si P-N junction draw current 100 m Amps. at 292.5 K, ifN type doped with atom 0.8 x 102o. 1/m3 and P-type doped with atom 0.25 x 101 1/m3. If pure carriers density for Si is 2.5 x 10. 1/m3. Find reverse saturation current for Si PN junction.
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