Question Four Consider a p-type silicon substrate at T = 300K doped to No =104 cm. Let Qss = 1010 cm?, tox = 500 Å and assume the silicon dioxide with Øms = -0.83 V. What is the width of the depletion in the substrate.

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Question Four
Consider a p-type silicon substrate at T = 300K doped to No =104 cm³. Let Qss = 1010
cm?, tox = 500 Å and assume the silicon dioxide with Øms = -0.83 V. What is the width
of the depletion in the substrate.
Transcribed Image Text:Question Four Consider a p-type silicon substrate at T = 300K doped to No =104 cm³. Let Qss = 1010 cm?, tox = 500 Å and assume the silicon dioxide with Øms = -0.83 V. What is the width of the depletion in the substrate.
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