R1 10k R2 10k www C1 0.1uF 4 7 6 2 C2 0.1uF VCC RST DIS THR TRI 5 CON Fig. 4 8 VCC 5V GND 1 U1 OUT 3 Vout 555
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If you apply 4V on pin 5 draw the waveform at each pin 2,3 on the same axis as the dual mode for the oscilloscope ,Comment on the waveform shape.
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- If R0= 44 milliohms and Ri= 736 ohms, what is R1 , R2, R3 in the equivalent circuit????For the circuit below if selection lines S2S1S0=011 the output Z will be ____, if S2S1S0=100, Z will be ____, if S2S1S0=001, Z will be ____.i want ans q 3these the ans for 1.2(1) https://www.bartleby.com/questions-and-answers/please-provide-calculation-with-brief-discusssion-and-explanation-in-your-solution.-1.-find-volt-in-/7ab4b23c-9640-4a81-a0d4-f4ec037a2eb8(2) https://www.bartleby.com/questions-and-answers/1.-find-volt-in-the-circuit-below-assuming-il0-0a.-percent3d-ww-90e-ut-v-2-h-ll/a3894d58-ee1a-47e2-b3da-973f4aa01991
- Suppose that we have an unusual type of FET for which iD=3 exp(vGS)+0.01vDS2 Here, iD is in mA, vGS is in volts, and vDS is in volts. Determine the values of gm and rd for a Q point of VGSQ=1 V and VDSQ = 10 V.Are the following statements correct or wrong? Justify your answer. (a) GTO requires very low current applied to its gate to be turn off. (b) IGBT is a voltage driven device. (c) BJT is more efficient than IGBT in high power applications. (d) Thyristors are used only for low voltage, low current applications. (e) MOSFETs are used for high frequency applications.Are the following statements correct or wrong? Justify your answer. (a) GTO requires very high current applied to its gate to be turn ofr. (b) IGBT is a current driven device. (c) IGBT is more efficient than BJT in high power applications. (d) Thyristors are used only for low voltage, low current applications. (e) MOSFETS are used for low frequency applications.
- Calculate: a) IDQ and VGSQ b) IDS c) IDA 12-bit counting converter with VFS = 5 V and fc = 1 MHz has an input voltage VX = 3.760 V. (a) What is the output code? What is the conversiontime TT for this value of VX if fc = 1 MHz? (b) Repeat for VX = 4.333 V.2. Given:VCC: 16 voltsRB1: 7000 ohmsRB2: 50 ohmsRB3: 50 ohmsRB4: 1500 ohmsB=beta: 100RE: 750 ohmsRC: 500 ohmsVCE: ? volts
- For this question : https://www.bartleby.com/questions-and-answers/i-need-a-circuit-that-will-do-normal-am-modulation-using-diode-switching-and-then-demodulate-it-enve/b8317fe9-a8b5-4b96-8fb7-1fb978c62717 I used the circuit in the provided photo And i got wrong values, the output should be the message signal but i got another ouput. I provided a photo after the circuit photo that shows the result in the time domain.Are the following statements correct or wrong? Justify your answer.(a) GTO requires very high current applied to its gate to be turn off.(b) IGBT is a current driven device.(c) IGBT is more efficient than BJT in high power applications.(d) Thyristors are used only for low voltage, low current applications.(e) MOSFETs are used for low frequency applications. (I got the answer in the search but if possible,i want it in a slightly different way)What values of β correspond to α = 0.970, 0.993, 0.250? (b) What values of αcorrespond to β = 40, 200, 3?