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- sample at 300 K is doped wit s with energy Eph> E=rsjare t /CH, it was determined that ti a of impurities, the total conce-

- sample at 300 K is doped wit s with energy Eph> E=rsjare t /CH, it was determined that ti a of impurities, the total conce-

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A Si semiconductor sample at 300 K is doped with N=1×10 cm°,a N= 1%105 cm² are then added to the sample, photons with energy Eph > E- sare then incident on the sample resulting in 1×10° excess electron-hole pairs /cm, it was determined that the minority carrier diffusion length is 1×10° cm, assuming complete ionization of impurities, the total concentration of the minority carriers at i = 500 ns in the sample will be: OA 1.27e6 /cm^3 OB. 3670 /cm^3 OC.0 /cm^3 OD.7.85e6 /cm^3 DE 3.67e-9 /cm^3
Transcribed Image Text:A Si semiconductor sample at 300 K is doped with N=1×10 cm°,a N= 1%105 cm² are then added to the sample, photons with energy Eph > E- sare then incident on the sample resulting in 1×10° excess electron-hole pairs /cm, it was determined that the minority carrier diffusion length is 1×10° cm, assuming complete ionization of impurities, the total concentration of the minority carriers at i = 500 ns in the sample will be: OA 1.27e6 /cm^3 OB. 3670 /cm^3 OC.0 /cm^3 OD.7.85e6 /cm^3 DE 3.67e-9 /cm^3
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