Si pn junction photodetector has a depletion region of 3 um, a cross sectional area of 3x10 cmr, and a ninority carrier lifetime of 1 us. Photons of $80 nm and optical power of 24.7 mW are incident on the letector, the detector absorption coefficient at the incident photon wavelength is 0. 7×10 cm. At 300 K temperature the detector photo-current will be? O a. 366.9 uA Ob. 111.2 pA Oc 210.6 LA 1d 2149 A

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A Si pn junction photodetector has a depletion region of 3 um, a cross sectional area of 3x10 cm, and a
minority carrier lifetime of 1 us. Photons of $80 nm and optical power of 24.7 mW are incident on the
detector, the detector absorption coefficient at the incident photon wavelength is 0. 7×10 cm. At 300 K
temperature the detector photo-current will be?
O a. 366.9 A
Ob.111.2 pA
Oc 210.6 uA
Od. 2149 A
Transcribed Image Text:A Si pn junction photodetector has a depletion region of 3 um, a cross sectional area of 3x10 cm, and a minority carrier lifetime of 1 us. Photons of $80 nm and optical power of 24.7 mW are incident on the detector, the detector absorption coefficient at the incident photon wavelength is 0. 7×10 cm. At 300 K temperature the detector photo-current will be? O a. 366.9 A Ob.111.2 pA Oc 210.6 uA Od. 2149 A
: Properties of Si, Ge, and GaAs at 300 K, and Some Universal Constants
UNIVERSAL CONSTANTS
6.63 x 10-
9.11 x 10-1K
3.14
Properties
SEMICONDUCTOR
4.
Si
Ge
GaAs
mo
Eg (eV)
n (cm-3)
An (cm? /V s)
1.1
0.67
1.42
2.3 x 1013
3900
1.5 x 1010
1.8 x 10
1.602 x 10 19
8.85 x 10 12 F/
1.05 x 10-3J-
8.6 x 10- eVA
26 mV (T 300
26 meV (T = 300
3 x 10 m/s
1500
8500
400
fo
(ст*/V - s)
Ne (cm-)
Ne (cm)
m m
m/m
&(F/m)
450
1900
1.04 x 1019
6 x 108
4.45 x 107
7.72 x 105
2.78 x 109
9.84 x 1018
KT/q
KT
0.082
0.98
0.067
0.28
0.49
0.45
11.7
16
13.1
Nair=1
RGaAs 3.66
Some useful relations
EgALGa-As(r) = 1.424 +1.247.r (eV)
Egn,GaAs(r) 1.425- 1.501r +0.436r2 (eV)
1 eV 1.602 x 10-19 J
1 KG = 1x 10-
%3D
%3D
Wb/em2
%3D
Transcribed Image Text:: Properties of Si, Ge, and GaAs at 300 K, and Some Universal Constants UNIVERSAL CONSTANTS 6.63 x 10- 9.11 x 10-1K 3.14 Properties SEMICONDUCTOR 4. Si Ge GaAs mo Eg (eV) n (cm-3) An (cm? /V s) 1.1 0.67 1.42 2.3 x 1013 3900 1.5 x 1010 1.8 x 10 1.602 x 10 19 8.85 x 10 12 F/ 1.05 x 10-3J- 8.6 x 10- eVA 26 mV (T 300 26 meV (T = 300 3 x 10 m/s 1500 8500 400 fo (ст*/V - s) Ne (cm-) Ne (cm) m m m/m &(F/m) 450 1900 1.04 x 1019 6 x 108 4.45 x 107 7.72 x 105 2.78 x 109 9.84 x 1018 KT/q KT 0.082 0.98 0.067 0.28 0.49 0.45 11.7 16 13.1 Nair=1 RGaAs 3.66 Some useful relations EgALGa-As(r) = 1.424 +1.247.r (eV) Egn,GaAs(r) 1.425- 1.501r +0.436r2 (eV) 1 eV 1.602 x 10-19 J 1 KG = 1x 10- %3D %3D Wb/em2 %3D
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