Silicon tetrachloride, SiCl4, is a key chemical in the silicon chemical vapor deposition. The purity of SiCl4 is essential to the production of high-quality silicon films. To eliminate trichlorosilane, SiHCl3, within the high-purity silicon tetrachloride, chlorine gas is bubbled through the liquid SiCl4 at 298 K to promote the following reaction: SiHCl3 + Cl2 SiCl4 + HCl The HCl is then easily removed in a stripper, using nitrogen as the stripping gas. To determine the mass-transfer coefficient of chlorine in liquid SiCl4, a Schmidt number is needed. Evaluate the Schmidt number for chlorine in liquid silicon tetrachloride at 298 K. The following information is available for SiCl4 at 298 K: ρL = 1.47 g/cm3 and μL = 5.2 * 10-4 kg/m.s The diffusivity for chlorine in silicon tetrachloride can be evaluated using the Wilke–Chang equation.
Silicon tetrachloride, SiCl4, is a key chemical in the silicon chemical vapor deposition. The purity of SiCl4 is essential to the production of high-quality silicon films. To eliminate trichlorosilane, SiHCl3, within the high-purity silicon tetrachloride, chlorine gas is bubbled through the liquid SiCl4 at 298 K to promote the following reaction: SiHCl3 + Cl2 SiCl4 + HCl The HCl is then easily removed in a stripper, using nitrogen as the stripping gas. To determine the mass-transfer coefficient of chlorine in liquid SiCl4, a Schmidt number is needed. Evaluate the Schmidt number for chlorine in liquid silicon tetrachloride at 298 K. The following information is available for SiCl4 at 298 K: ρL = 1.47 g/cm3 and μL = 5.2 * 10-4 kg/m.s The diffusivity for chlorine in silicon tetrachloride can be evaluated using the Wilke–Chang equation.
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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Silicon tetrachloride, SiCl4, is a key chemical in the silicon chemical vapor deposition. The purity of
SiCl4 is essential to the production of high-quality silicon films. To eliminate trichlorosilane, SiHCl3,
within the high-purity silicon tetrachloride, chlorine gas is bubbled through the liquid SiCl4 at 298 K
to promote the following reaction:
SiHCl3 + Cl2 SiCl4 + HCl
The HCl is then easily removed in a stripper, using nitrogen as the stripping gas. To determine the
mass-transfer coefficient of chlorine in liquid SiCl4, a Schmidt number is needed. Evaluate the
Schmidt number for chlorine in liquid silicon tetrachloride at 298 K. The following information is
available for SiCl4 at 298 K: ρL = 1.47 g/cm3
and μL = 5.2 * 10-4
kg/m.s
The diffusivity for chlorine in silicon tetrachloride can be evaluated using the Wilke–Chang equation.
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