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The charge carriers concentration in pure silicon is 4.5 x 1010 m-3 at 300°K. Where the Fermi level would be if the silicon doped by 1 × 1021 don or atoms? Find the location of Fermi level at 200°K and 900°K. Use E,(Si) = 1.1 eV.

The charge carriers concentration in pure silicon is 4.5 x 1010 m-3 at 300°K. Where the Fermi level would be if the silicon doped by 1 × 1021 don or atoms? Find the location of Fermi level at 200°K and 900°K. Use E,(Si) = 1.1 eV.

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11. The charge carriers concentration in pure silicon is 4.5 x 1016 m-3 at 300 K. Where the Fermi level would be if the silicon doped by 1 x 1021 don or at om s? Find the location of Fermi level at 200°K and 900°K. Use E,(Si) = 1.1 eV.
Transcribed Image Text:11. The charge carriers concentration in pure silicon is 4.5 x 1016 m-3 at 300 K. Where the Fermi level would be if the silicon doped by 1 x 1021 don or at om s? Find the location of Fermi level at 200°K and 900°K. Use E,(Si) = 1.1 eV.
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