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The hole concentration in a semiconductor at T=300K can be expressed as p(x) =10" exp| 20 |cm° , where x is measured in µm. If the hole diffusion coefficient is D, = 50 cm² /s. (1) Determine the hole diffusion current as a function of x. (2) Determine the location X, where the diffusion current is () of that at x= 0 .

The hole concentration in a semiconductor at T=300K can be expressed as p(x) =10" exp| 20 |cm° , where x is measured in µm. If the hole diffusion coefficient is D, = 50 cm² /s. (1) Determine the hole diffusion current as a function of x. (2) Determine the location X, where the diffusion current is () of that at x= 0 .

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The hole concentration in a semiconductor at T=300K can be expressed as p(x) =10" exp 20 cm , where x is measured in um. If the hole diffusion coefficient is D, = 50 cm²/s. (1) Determine the hole diffusion current as a function of x. (2) Determine the location X, where the diffusion current is (%) of that at x= 0.
Transcribed Image Text:The hole concentration in a semiconductor at T=300K can be expressed as p(x) =10" exp 20 cm , where x is measured in um. If the hole diffusion coefficient is D, = 50 cm²/s. (1) Determine the hole diffusion current as a function of x. (2) Determine the location X, where the diffusion current is (%) of that at x= 0.
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