The n-channel FETs below have K n’ = 100μA/V^2, W = 60μm, L = 3μm, Vt = 0.7V, and λ = 0.03V ^-1. d) M2 is in saturation with I D = 640μA (neglecting λ). What is V G of M2? e) What is the current, I D, of M2 taking channel length modulation into consideration?
The n-channel FETs below have K n’ = 100μA/V^2, W = 60μm, L = 3μm, Vt = 0.7V, and λ = 0.03V ^-1. d) M2 is in saturation with I D = 640μA (neglecting λ). What is V G of M2? e) What is the current, I D, of M2 taking channel length modulation into consideration?
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The n-channel FETs below have K n’ = 100μA/V^2, W = 60μm, L = 3μm, Vt = 0.7V, and λ
= 0.03V ^-1.
d) M2 is in saturation with I D = 640μA (neglecting λ). What is V G of M2?
e) What is the current, I D, of M2 taking channel length modulation into consideration?
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