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- a. SketchtheoutputvoanddeterminethedcleveloftheoutputforthenetworkofFig.2.49. Repeat part (a) if the ideal diode is replaced by a silicon diode. Repeat parts (a) and (b) if Vm is increased to 200 V, and compare solutions using Eqs. (2.7) and (2.8).Don't copy others work. provide correct solution Question (1)(a) Define homo-structure and hetero-structure devices with appropriate schematic diagram of such structures. (b) Explain the concepts of lattice matched hetero-structure. Sub: Optoelectronics Dept:EEEDensity of state of copper The Density of state for copper 8.9 gm/cm^3 Q1)Find and explain: a-The fermi level is located at........b-The energy gap = Q2)Choose and explain: a-The boud gap is (small-big)b-This means that copper is a(conductor-semiconductor-)
- A copper wire has a diameter of 2.05 mm and carries a current of 15 A due solely toelectrons. (These values are common in residential wiring.) Each electron has a charge of -1.60 x 10-19 C. Assume that the free-electron (these are the electrons capable of movingthrough the copper) concentration in copper is 1029 electrons/m³. Find the average velocity ofthe electrons in the wire.(02) DC Si Diode Circuit. (Course: Electronic Devices and Circuit Theory) What is the minimum value for RL needed to turn Zener diode ON?, And what is the maximum value for RL needed to turn Zener diode is ON? -Use Equation Operators or write it down on paper/digital paper. -Redraw and Apply. -You can add //comments for a better understanding. -Please answer without abbreviation. -Make it clean and clear typing/writing. Thank you.A 1N4728 zener diode has a Zz of 10 ohms. Considering the data from the manufacturer's sheet, Vz = 3.3 V with a test current, Iz, of 76 mA. What is the voltage across the zener terminals when the current is 95 mA? When the current is 55 mA? Include the graph where these values are shown.
- Apply each of diodeapproximations and determine:a. Current through D1b. Voltage across D2c. Voltage across R3 GIVEN: R1 = 2 kΩ, R2 = 1.2 kΩ, R3 = 6.8 kΩ E= 10 V D1: Si, rB = 2 Ω, rR = 220 kΩ D2: Si, rB = 5 Ω, rR = 560 kΩ DETERMING FIRST IF IT IS A FORWARD BIASED OR REVERSED BIASED THEN, SOLVE IN FIRST APPROXIMATION, SECOND APPROXIMATION AND THIRD APPROXIMATION SHOW THE CIRCUIT DIAGRAM IN EACH APPROXIMATIONFind the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is 300(0.cm)^-1. (b) Also find these values for P-type Si. Given ni=1.5x10^12 /Cm^3, un31200 * .Cm2/V.sec & pp3D400Cm^2/V.secGiven the schematic below, assume D1 and D2 are silicon with forward voltages of 0.7V. Find the following (with solutions) a) Conditions required wherein none of the diodes are conducting b) If both diodes are not conduction, what is Vo? Express in terms of Vi c) Plot the overall relationship of Vo and Vi in the coordinate system shown below. Remember, you are to plot the transfer characteristics of the circuit.
- A 30-Wp SHS has a charging current of 1.7A at 1000 W/m2 irradiance. When the irradiance is decreased to 800W/m?, how much charging current is expected?A copper wire 100 m long must experience avoltage drop of less than 1.5 V when a current of 2.5 A passesthrough it. Given that copper has an electrical conductivity of6.0E7 /(Ὠ-m), compute the minimum diameter of the wire.silicon is a doped with acceptor atoms to a density of 10^22 m^-3. If it is assumed that all acceptor centers are ionized . Calculate the conductivity of the extrinsic silicon, given that the intrinsic density is The density of acceptor atom is na=1022 m−3na=1022 m-3. The intrinsic density is ni=1.4×1016 m−3ni=1.4×1016 m-3. The mobility of electron is μe=0.16 m−3μe=0.16 m-3. The mobility of holes is μh=0.045 m−3μh=0.045 m-3.