What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 1.8*10^14/cc, 1000 times more donor doping, and forward bias of 0.54 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation.

What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 1.810^14/cc, 1000 times more donor doping, and forward bias of 0.54 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(Vs), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation.