Which of the following is not true about the doping of BJT regions O a. Base is lightly doped O b. Base is moderately doped O c. Collector is moderately doped O d. Emitter is heavily doped What should be the junction biasing for forward active mode to take place O a. CB forward, EB forward O b. CB reverse, EB forward O c. CB reverse, EB reverse O d. CB forward, EB reverse Which of the following is false about the Energy band diagram of a BJT O a. During forward active mode, reverse biasing the CB junction results in a big difference in CB and VB level of collector base, allowing huge concentrations of carriers to flow from the base to collector O b. During saturation mode, difference in CB and VB level of the regions decreases, allowing huge currents to flow O c. During forward active mode, forward biasing the EB junction results in a big difference in CB and VB level of emitter- base, allowing huge concentrations of carriers to flow from the emitter into the base O d. During cut-off mode, difference in CB and VB level of the regions increases, resulting to only small leakage current to flow
Which of the following is not true about the doping of BJT regions O a. Base is lightly doped O b. Base is moderately doped O c. Collector is moderately doped O d. Emitter is heavily doped What should be the junction biasing for forward active mode to take place O a. CB forward, EB forward O b. CB reverse, EB forward O c. CB reverse, EB reverse O d. CB forward, EB reverse Which of the following is false about the Energy band diagram of a BJT O a. During forward active mode, reverse biasing the CB junction results in a big difference in CB and VB level of collector base, allowing huge concentrations of carriers to flow from the base to collector O b. During saturation mode, difference in CB and VB level of the regions decreases, allowing huge currents to flow O c. During forward active mode, forward biasing the EB junction results in a big difference in CB and VB level of emitter- base, allowing huge concentrations of carriers to flow from the emitter into the base O d. During cut-off mode, difference in CB and VB level of the regions increases, resulting to only small leakage current to flow
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Transcribed Image Text:Which of the following is not true about the doping of BJT regions
a. Base is lightly doped
O b. Base is moderately doped
O c. Collector is moderately doped
O d. Emitter is heavily doped
What should be the junction biasing for forward active mode to take place
O a. CB forward, EB forward
O b. CB reverse, EB forward
O c. CB reverse, EB reverse
O d. CB forward, EB reverse
Which of the following is false about the Energy band diagram of a BJT
a. During forward active mode, reverse biasing the CB junction results in a big difference in CB and VB level of collector-
base, allowing huge concentrations of carriers to flow from the base to collector
O b. During saturation mode, difference in CB and VB level of the regions decreases, allowing huge currents to flow
O c. During forward active mode, forward biasing the EB junction results in a big difference in CB and VB level of emitter-
base, allowing huge concentrations of carriers to flow from the emitter into the base
O d. During cut-off mode, difference in CB and VB level of the regions increases, resulting to only small leakage current to
flow
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