You have semiconductor is equal to or above the bandgap energy, absorbed. For the various radiation types in the table below, state if the radiation will be absorbed or passed through each semiconductor. Incident Frequency Semiconductor Absorb Yes No 5x1017 Hz GaAs 2x1014 Hz Ge 1013 Hz Ge

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You have learned that if the energy of radiation incident on
semiconductor is equal to or above the bandgap energy, the light will be
absorbed. For the various radiation types in the table below, state if the
radiation will be absorbed or passed through each semiconductor.
PROBLEM 5
Absorb
No
Semiconductor
Incident Frequency
Yes
GaAs
5x1017 Hz
Ge
2x1014 Hz
Ge
1013 Hz
Si
x1016 Hz
5x1010 Hz
PbS
List of band gaps of semiconductor materials.
Band gap (eV)
@ 302K
Group Material
Symbol
IV
Diamond
5.5
IV
Silicon
Si
1.11
IV
Germanium
Ge
0.67
III-V
Gallium(III) nitride
GaN
3.4
III-V
Gallium(III) phosphide GaP
2.26
III-V
Gallium(II) arsenide
GaAs
1.43
IV-V
Silicon nitride
Si,NA
IV-VI
Lead(II) sulfide
PbS
0.37
IV-VI
Silicon dioxide
Sio,
Copper(l) oxide
Cu,0
2.1
Transcribed Image Text:You have learned that if the energy of radiation incident on semiconductor is equal to or above the bandgap energy, the light will be absorbed. For the various radiation types in the table below, state if the radiation will be absorbed or passed through each semiconductor. PROBLEM 5 Absorb No Semiconductor Incident Frequency Yes GaAs 5x1017 Hz Ge 2x1014 Hz Ge 1013 Hz Si x1016 Hz 5x1010 Hz PbS List of band gaps of semiconductor materials. Band gap (eV) @ 302K Group Material Symbol IV Diamond 5.5 IV Silicon Si 1.11 IV Germanium Ge 0.67 III-V Gallium(III) nitride GaN 3.4 III-V Gallium(III) phosphide GaP 2.26 III-V Gallium(II) arsenide GaAs 1.43 IV-V Silicon nitride Si,NA IV-VI Lead(II) sulfide PbS 0.37 IV-VI Silicon dioxide Sio, Copper(l) oxide Cu,0 2.1
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