What Are The Advantages And Disadvantages Of Double Gate CMOS?

Nowadays, Silicon CMOS is the ultimate winner for the high-speed and/or low power computations and logic race. It is the pillar of the semiconductor industry and the main driver for device scaling. The lithographic process advancement and the integration of new materials (like, SiGe and HfO) [2] with the conventional CMOS had helped in overcoming the key challenge of preserving the low power and high performance which was very hard to maintain due to aggressive scaling [3]–[9].

The risk to this alternative is the fear that the industry will continue to move into larger sized wafers and it will become increasingly difficult to find suppliers for the 150mm wafer. If that should happen, Mitel would once again be in the same situation. Given the forecasted demand for Mitel’s semiconductors, there is not sufficient cause to upgrade the Bromont Foundry to sizes of wafers greater than 150mm. At anything larger than 150mm Mitel will find itself in an excess capacity situation and have to find ways to sell more integrated circuits. Maintaining Status quo

The use of nano-materials and extreme precision micro-engineering has the potential for great improvement in the world of electronics and information technology by providing smaller, faster, and more powerful computers and this has been at the forefront of the nanotechnology commercialization . Great examples of how nanotechnology is currently being used in these fields are products such as processors, data storage, and memory components made with nano-materials, TVs, monitors and even smartphone screens that use organic light-emitting diodes (OLED), and waterproof electronics such as smartphones due to the application of nano-coatings

In order to fix these shortcomings, Mark Kendall and his team have come up with a solution called Nanopatch. The Nanopatch technology is made with

A gate turn off current greater than 2 Amps is necessary to drive either parallel or back-to-back MOSFETs and maintain fast turn off time. The fast turn off time is essential to prevent reverse current to the supply after fast turn off threshold detection.

The mote’s size makes energy management a key component. The circuit will contain circuits, a temperature sensor, and A/D converter, microprocessor, SRAM, communications circuits, and power control circuits. Sensors work together with the IC, which will operate from a power source integrated with the platform.

Professor Malcolm P. Baker and Alison Berkley Wagonfeld, Executive Director of the HBS California Research Center, prepared this case. HBS

By this new platform, the circuit could be modified easily and faster to form the derivative products.

The sustained advancement of the semiconductor silicon based technology is the key driver of the performance enhancements and functionality expansion of the electronic devices. This extraordinary growth of the electronic devices types and functionality is imposing urgent needs of higher computational speeds, better data transmission bandwidths and

Face the loss in performances while improving the power efficiency, multiple Vdd, and multiple Vth techniques have been proposed. The gates on critical paths operate at the higher Vdd or lower Vth, while those on non-critical paths operate at the lower Vdd or higher Vth, thereby reducing overall power consumption without performance degradation.

Abstract — Using Moore’s law, we will continue to get abundant transistors which only will be limited by the amount of energy consumed. Energy efficiency can be improved to many orders of magnitude with the help of Near Threshold Voltage (NTV). There are various Design techniques required for reliable operation on a wide range of input voltage – from very low to sub threshold region. Coming to the systems designed for NTVs, they can select their modes of operation dynamically from very high performances, to high efficient energy modes and also to lowest power.

The continuous scaling of CMOS technology has broadened the spectrum of applications. Complex architectures can be now realized on a single chip. The integration of existing and new technologies with CMOS extends the scope of implementation.

Index Terms—Serial register, QCA technology, Quantum dot, VLSI Technology. I. INTRODUCTION NE of the most promising nanotechnologies in the present day scenario in a pool of various technologies in the research phase is Quantum-Dot Cellular Automata (QCA) which is able to replace the CMOS technology. As we see in the current scenario there is rapid scaling of CMOS technology to accommodate millions, now probably billions of transistors in a specified area as efficiently as possible. As predicted by Gordon Moore, in the next few years CMOS is set to hit a

• Speed. Signals switching between logic 0 and logic 1 is much quicker within a chip than compared between chips. Communication within a chip is hundreds of times faster than the communication between chips on a printed circuit board. Generally the high speed of circuit’s on-chip is due to their small size—smaller components and wires have smaller parasitic capacitances to slow down the signal.

Key words: Low power; parallel prefix adder; carry save adder; ripple carry adder; han-carlson adder