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1. Once again, consider the sample of silicon at 300 K in which the Fermi level is found 0.22 eV above the top of the valence band. Assume the semiconductor is not compensated. a) What type of semiconductor is this sample? Intrinsic? Extrinsic? p or n-type? b) What is the carrier concentration of electrons and holes in this sample at thermal equilibrium?

1. Once again, consider the sample of silicon at 300 K in which the Fermi level is found 0.22 eV above the top of the valence band. Assume the semiconductor is not compensated. a) What type of semiconductor is this sample? Intrinsic? Extrinsic? p or n-type? b) What is the carrier concentration of electrons and holes in this sample at thermal equilibrium?

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1. Once again, consider the sample of silicon at 300 K in which the Fermi level is found 0.22 eV above the top of the valence band. Assume the semiconductor is not compensated. a) What type of semiconductor is this sample? Intrinsic? Extrinsic? p or n-type? b) What is the carrier concentration of electrons and holes in this sample at thermal equilibrium? MacBook Air
Transcribed Image Text:1. Once again, consider the sample of silicon at 300 K in which the Fermi level is found 0.22 eV above the top of the valence band. Assume the semiconductor is not compensated. a) What type of semiconductor is this sample? Intrinsic? Extrinsic? p or n-type? b) What is the carrier concentration of electrons and holes in this sample at thermal equilibrium? MacBook Air
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