11.13 The i-v characteristic of an n-channelenhancement MOSFET is shown in Figure P11.13(a);a standard amplifier circuit based on the n-channelMOSFET is shown in Figure P11.13(b). Determine thequiescent current ino and drain-to-source voltage vs2.0I= 25°C1.81.6Vas10 V--9V-1.41.28V-1.00.87V-0.60.45 V=0.23 V-1.02.03.04.05.06.0 7.08.09.010Drain-source voltage vps. V(a)RpVGDVDDVGSVaDrain current ip, A if Vcc = 7 V; VD= 10 V; and Rp = 5 2. In whatregion is the transistor operating?%3D

First, write the KVL in the output and write the equation,

Answered: 11.13 The i-v characteristic of an…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Shown in Figure P12.17 is the Darlington pair, which is equivalent to a single transistor, as indicated in the figure. Assuming that both Q1 and Q2 are operating in the active region, with |VBE|= 0.6 V, determine the value for VBE for the equivalent transistor in the active region. Repeat for the Sziklai pair shown in Figure P12.28.
a.) Consider a two-BJT configuration in Figure 1. You may assume that both transistors are the same with the same β, VBE,on = 0.7 V, and VCE,EOS = 0.3 V. Determine the minimum voltage VBE that will turn ON both Q1 and Q2. b.) Using the BJT small-signal model given in Figure 2, determine the AC current gain Ai = iout/iin for the circuit given in Figure 3. Assume ro >> rπ. You may assume that β is large.
Refer to the differential amplifier circuit shown below . Determine the quiescent DC voltage at the collector terminal of each transistor assuming VBE of two transistor are negligible. What will be the quiescent DC values if VBE is taken to be 0.7 V.
For the class B output stage of Figure 2, let ??? = 6 V and ?? = 4Ω. If the output is a sinusoidal with 4.5V peak amplitude, find; (a) The output power. (b) The average power drawn from each supply/ (c) The power efficiency obtained at this output voltage. (d) The maximum power that each transistor must be capable of dissipating safely.
NOTE: FOR ALL CIRCUITS SHOWN IN THIS QUIZ ASSUME THAT: β= 100 (for all transistors) ; Early voltage equal to infinity. 3. - For the circuit shown in figure C, determine the value of the gainAv = vo/vs Note: It is known that Vcc = 20v
A base voltage of four volts is applied to an NPN bipolar junction transistor. A twenty kilo ohm resistor is linked to the base, while a hundred kilo ohm resistor is connected to the collector. The Collector is powered by a six volt supply voltage. Assume the transistor is in active mode, with a fifty common Emitter current gain(β).(i) Utilize the dc equivalent model of the transistor to draw the circuit design.(ii) Calculate the Collector current (IC) and the Base current (IB) .ii) Locate/determine the result (VCE).
a) What is the advantage of increasing the switching frequency in switching converters (Buck, Boost etc.)and causes disadvantages to arise? b) General characteristics of IGBT and MOSFET, such as the current, voltage and switching frequency they can be producedCompare in terms of values. c) Output current and voltage ripples for a Buck-Boost type power converterWhat variables do (ripples) depend on? Explain.
a pnp transistor with β=60 is connected in a common-base configuration as shown in figure below. (a) The emitter is driven by a constant-current source with IE=0.75mA. Determine IB,IC,VC and α. (b) Repeat part (a) if IE=1.5mA (c) Is the transistor biased in the forward-active mode for both parts (a) and (b)?Why or why not?
Consider the MOSFET amplifer circuit shown in Figure below. Assume µnCox(W/L) = 4mA/V2, Vt = 1V Draw an equivalent DC model, and equivalent circuit of the amplifier. Determine the drain current and its overall voltage gain respectively.
Q.1/ Figure below shows a CE power amplifier in which the collector resistor serves also as the load resistor. Assume DC=ac=100.a. Determines the dc Q-point (ICQ and VCEQ).b. Determine the voltage gain and the power gain.c. What changes would be necessary to convert the circuit to a pnp transistor with a positive supply? What advantage would this have?
Discuss the advantages and disadvantages of a common-source, a common- gate and a common-drain amplifier configuration (JFET).
Given the circuit of Figure P10.6, determine theoperating point of the transistor. Assume a 0.6-V offsetvoltage and β = 150. In what region is the transistor?

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