Answer all the items. Thanks! 15. At very high temperatures, the extrinsic semiconductors become intrinsic because:a. Drive in the diffusion of dopants and carriersb. Covalent bonds are brokenc. Impurity ionization dominants over band-to-band transitiond. Band-to-band transition is balanced by impurity ionization16. If a surface leakage current is 4nA for a reverse voltage of 35V, what is the surfaceleakage current for a reverse voltage of 43V?а. 2.8 пАb. 3.3 ПАс. 4.9 nАd. 8 nA17. A silicon diode has an ambient temperature of 25'C, what is the barrier potentialwhen the junction temperature is 75'C?а. О.14Vb. 0.56Vc. 0.60Vd. 0.65V18. The peak inverse voltage (PIV) across a non-conducting diode in a bridge rectifierequals approximately:a. Half the peak secondary voltageb. Twice the peak secondary voltagec. The peak value of the secondary voltaged. Four times the peak value of the secondary voltage19. Ripple voltage in a rectifier circuit is caused by the:a. Charging of filter capacitorb. Discharging of filter capacitorc. Both A and Bd. Surge current in capacitor filter20. For a load current of 3mA and a filter capacitance of 1800µF, what is the peak-to-peak ripple out of the bridge rectifier if capacitor-input filter is used?a. 1.67Vb. 13.9mVс. 27.8mVd. 41.7mV21. Every known element hasa. The same type of atomsb. A unique type of atomc. The same number of atomsd. Several different types of atoms22. An atom consists ofa. One nucleus and only one directionb. One nucleus and one or more electronsc. Protons, electrons, and neutronsd. Answer b or c

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15. At very high temperatures, the extrinsic semiconductors become intrinsic because: a. Drive in the diffusion of dopants and carriers b. Covalent bonds are broken c. Impurity ionization dominants over band-to-band transition d. Band-to-band transition is balanced by impurity ionization 16. If a surface leakage current is 4nA for a reverse voltage of 35V, what is the surface leakage current for a reverse voltage of 43V? а. 2.8 пА b. 3.3 пА c. 4.9 nA d. 8 nA 17. A silicon diode has an ambient temperature of 25'C, what is the barrier potential when the junction temperature is 75'C? a. 0.14V b. 0.56V C. 0.60V d. 0.65V

15. At very high temperatures, the extrinsic semiconductors become intrinsic because: a. Drive in the diffusion of dopants and carriers b. Covalent bonds are broken c. Impurity ionization dominants over band-to-band transition d. Band-to-band transition is balanced by impurity ionization 16. If a surface leakage current is 4nA for a reverse voltage of 35V, what is the surface leakage current for a reverse voltage of 43V? а. 2.8 пА b. 3.3 пА c. 4.9 nA d. 8 nA 17. A silicon diode has an ambient temperature of 25'C, what is the barrier potential when the junction temperature is 75'C? a. 0.14V b. 0.56V C. 0.60V d. 0.65V

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

Explain what is meant by the intrinsic regime of a doped semiconductor, and whether this behaviour is seen for all temperatures.
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A. Why does the conductivity of a semiconductor and some insulators change with impurity content? Compare this with the behaviour of metallic conductors. B. Discuss the location of the Fermi levels of intrinsic and extrinsic (n-type and p-type) semiconductors in low temperature and high temperature ranges. C. Discuss why the structure of the p-n junction is so important to modern technologies that impact our daily life.
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