16 -3 Q6: Consider a MOS device with a p-type silicon substrate with N = 2×10¹ cm³. The a -2. oxide thickness is t=15 nm and the equivalent oxide charge is Q = 7×10¹⁰ cm OX p-polysilicon gate, Calculate the threshold voltage for (a) an n polysilicon gate, (b) a and (c) an aluminum gate.

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Q6: Consider a MOS device with a p-type silicon substrate with N = 2×10¹ cm The
oxide thickness is t=15 nm and the equivalent oxide charge is Q = 7×10¹⁰ cm²
a
-2.
OX
+
Calculate the threshold voltage for (a) an n polysilicon gate, (b) a p -polysilicon gate,
and (c) an aluminum gate.
Transcribed Image Text:-3 Q6: Consider a MOS device with a p-type silicon substrate with N = 2×10¹ cm The oxide thickness is t=15 nm and the equivalent oxide charge is Q = 7×10¹⁰ cm² a -2. OX + Calculate the threshold voltage for (a) an n polysilicon gate, (b) a p -polysilicon gate, and (c) an aluminum gate.
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P-channel Metal-Oxide Semiconductor (PMOS), N-channel Metal-Oxide Semiconductor (NMOS), and Complementary Metal-Oxide Semiconductor (CMOS)
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