2. Design an equivalent dual-transistor MOSFET circuit with biasing by constant

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2. Design an equivalent dual-transistor MOSFET circuit with biasing by constant current source. You can make
both transistors Q, and Q, having equal lengths but widths related to W/W, = 5 to obtain I = 0.5 mA. Consider
Voo = -Vss = 15V, ka' (W/L)= 0,8 mA/v', V= IV. You can ignore the channel-length modulation. Find the
required value for R. What is the voltage at the gates of Q1 and Q2? What is the lowest voltage allowed at
the drain of Q2 while Q2 remains in the saturation region? (You have to show each step of the calculation
with proper diagram).
Transcribed Image Text:2. Design an equivalent dual-transistor MOSFET circuit with biasing by constant current source. You can make both transistors Q, and Q, having equal lengths but widths related to W/W, = 5 to obtain I = 0.5 mA. Consider Voo = -Vss = 15V, ka' (W/L)= 0,8 mA/v', V= IV. You can ignore the channel-length modulation. Find the required value for R. What is the voltage at the gates of Q1 and Q2? What is the lowest voltage allowed at the drain of Q2 while Q2 remains in the saturation region? (You have to show each step of the calculation with proper diagram).
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